References
- T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices, 36, 1929 (1989). [DOI: https://doi.org/10.1109/16.34272]
- J. J. Lih, C. F. Sung, C. H. Li, T. H. Hsiao, and H. H. Lee, J. Soc. Inf. Disp., 12, 367 (2004). [DOI: https://doi.org/10.1889/1.1847734]
- G. Kawachi, S. Tsuboi, T. Okada, M. Mitani, and M. Matsumura, J. Appl. Phys., 100, 114507 (2006). [DOI: https://doi.org/10.1063/1.2392717]
- A. A. Orouji and M. J. Kumar, IEEE Trans. Device Mater. Reliab., 6, 315 (2006). [DOI: https://doi.org/10.1109/TDMR.2006.876608]
- S. H. Han, I. S. Kang, N. K. Song, M. S. Kim, J. S. Lee, and S. K. Joo, IEEE Trans. Electron Devices, 54, 2546 (2007). [DOI: https://doi.org/10.1109/TED.2007.901880]
- D. Zhang, M. Wang, H. Wang, Y. Wu, H. Zhou, and J. He, Proc. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IEEE, Hsinchu, Taiwan, 2015) p. 407.
- G.A.M. Hurkx, D.B.M. Klaassen, and M.P.G. Knuvers, IEEE Trans. Electron Devices, 39, 331 (1992). [DOI: https://doi.org/10.1109/16.121690]
- M. J. Powell, C. van Berkel, and J. R. Hughes, Appl. Phys. Lett., 54, 1323 (1989). [DOI: https://doi.org/10.1063/1.100704]
- C. Hu, S. C. Tam, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, IEEE J. Solid-State Circuits, 20, 295 (1985). [DOI: https://doi.org/10.1109/JSSC.1985.1052306]
- A. Schwerin, W. Hansch, and W. Weber, IEEE Trans. Electron Devices, 34, 2493 (1987). [DOI: https://doi.org/10.1109/T-ED.1987.23340]
- K. M. Han and C. T. Sah, IEEE Trans. Electron Devices, 45, 1624 (1998). [DOI: https://doi.org/10.1109/16.701500]
- K. C. Moon, J. H. Lee, and M. K. Han, IEEE Trans. Electron Devices, 52, 512 (2005). [DOI: https://doi.org/10.1109/TED.2005.844740]
- Y. H. Tai, S. C. Huang, and P. T. Chen, IEEE Trans. Device Mater. Reliab., 10, 62 (2010). [DOI: https://doi.org/10.1109/TDMR.2009.2033466]
- C. H. Kim, K. S. Sohn, and J. Jang, J. Appl. Phys., 81, 8084 (1997). [DOI: https://doi.org/10.1063/1.365416]