• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.481-485
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• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.414-419
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• 2012

In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from $SnO_2$ to ZnO in SnZnO lattice. With the $SnO_2$-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 $cm^2/Vs$ and $2{\times}10^8$ were achieved, respectively.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.246-249
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• 2007

A triple-band antenna was developed and fabricated by LDS(Laser Direct Structuring) process. The effects of the plating rate and heat treatment condition were investigated and the gains of fabricated antennas were measured at various frequencies. The laser irradiated surface shows clearly that there are prominence and depression. It shows anchoring effect between a plating material and ablation surface. The plating rate was decreased when the plating material is exhausted in the solution. This solution needs to refreshed by the new aid solution. The copper plating thickness is decreased with the increase of heat treatment temperature in the same time but it does not change other condition. The gain of LDS antenna showed higher than the generally processed antenna. This result was related with practical use of the dimension and effective dielectric constant.

• Journal of the Korean Graphic Arts Communication Society
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• v.28 no.2
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• pp.31-44
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• 2010

Ever since the introduction of offset lithography, an operator have looked for ways to improve the process by reducing need for dampening solution. Lithography like off-set printing is processed using the repellent properties between water and oil, so all inks for lithography printing must work with dampening solution. The dampening solution may cause the emulsification of ink by the printing pressure in the printing nip. Emulsified ink changed viscosity, tack and causes problems such as bad transfer, uniform density and printed mottle. For a high quality web printing, we studied the effect of emulsified heat-set web inks on the printability, such as amount of ink transfer, printed density and uniformity. For this study, we were carried out by using IGT printability tester C1. For determination of ink properties using the spread meter and Thwing Albert Ink-o-meter, and using the densitometer and image analysis for printed quality determination. The experimental results of this study, we look forward to can be used as the basis for improve of the web print quality.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.995-997
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• 2009

$In_2O_3$ thin-film transistors (TFTs) were fabricated on various dielectrics [$SiO_2$ and self-assembled nanodielectrics (SANDs)] by spin-coating a $In_2O_3$ film precursor solution consisting of methoxyethanol (solvent), ethanolamine (EAA, base), and $InCl_3$ as the $In^{3+}$ source. Importantly, an optimized film microstructure characterized by the high-mobility $In_2O_3$ 004 phase, is obtained only within a well-defined base: $In^{3+}$ molar ratio. The greatest electron mobilities of ~ 44 $cm^2$, for EAA:$In^{3+}$ molar ratio = 10, $V^{-1}s^{-1}$, is measured for $n^+$-Si/SAND/$In_2O_3$/Au devices. This result combined with the high $I_{on}:I_{off}$ ratios of ~ $10^6$ and very low operating voltages (< 5 V) is encouraging for high-speed applications.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.100-104
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• 2019

We have investigated the feasibility of fabricating fine stripes using needle coating for potential applications in solution-processed organic light-emitting diodes (OLEDs). To this end, we have employed an aqueous poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) solution that has been widely used as a hole injection layer (HIL) of OLEDs and performed needle coatings by varying the process parameters such as the coating gap and coating speed. As expected, the stripe width is reduced with increasing coating speed. However, the central thickness of the stripe is rather increased as the coating speed increases, which is different from other coating processes such as slot-die and blade coatings. It is due to the fact that the meniscus formed between the needle tip and the substrate varies depending sensitively on the coating speed. It is also found that the stripe width and thickness are reduced with increasing coating gap. To demonstrate its applicability to OLEDs, we have fabricated a red OLED stripe and obtained light emission with the width of about 90㎛.

• Resources Recycling
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• v.13 no.2
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• pp.47-53
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• 2004

Waste aluminum dross is a major waste in the aluminum scrap smelters, and some metallic aluminum remains in the waste dross. In the previous study, waste aluminum dross was leached with sodium hydroxide solution to extract the remained aluminum into the solution, and aluminum hydroxide precipitate was recovered from the leached solution. A pilot plant was constructed and tested to demonstrate the developed technology. One thousand tons of waste aluminum dross could be processed, and about five hundred tons of aluminum hydroxide could be produced in the pilot plant. From the test run of the pilot plant, it was confirmed that the developed technology could be employed as a commercial scale and the produced aluminum hydroxide could be used for water treatment agent.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.119-122
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• 2018

Various ZnO/Ag/ZnO multilayers were fabricated and their optical properties were investigated. Top and bottom ZnO layers were formed by sol-gel method and mid-metal layers were deposited by spin coating. To find suitable deposition condition of Ag, we measure thickness and sheet resistance of Ag monolayer. After the optimization of Ag monolayer, we fabricate ZnO/Ag/ZnO multilayers. Transmittance of ZnO/Ag/ZnO multilayers increased to 63%. In near IR region, transmittance of ZnO/Ag/ZnO multilayers decreased to 35% when the concentration of Ag solution was 2.5wt%.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.321-326
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• 2021

We fabricated BiAlO thin film by a solution process with a brush coating to be used as liquid crystal (LC) alignment layer. Solution-processed BiAlO was coated on the glass substrate by brush process. Prepared thin films were annealed at different temperatures of 80℃, 180℃, and 280℃. To verify whether the BiAlO film was formed properly, X-ray photoelectron spectroscopy analysis was performed on Bi and Al. Using a crystal rotation method by polarized optical microscopy, LC alignment state was evaluated. At the annealing temperature of 280℃, the uniform homogenous LC alignment was achieved. To reveal the mechanism of LC alignment by brush coating, field emission scanning electron microscope was used. Through this analysis, spin-coated and brush coated film surface were compared. It was revealed that physical anisotropy was induced by brush coating at a high annealing temperature. Particles were aligned in one direction along which brush coating was made, resulting in a physical anisotropy that affects a uniform LC alignment. Therefore, it was confirmed that brush coating combined with BiAlO thin film annealed at high temperature has a significant potential for LC alignment.