Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Photocurrent Characteristics of Zinc-Oxide Films Prepared by Using Sputtering and Spin-Coating Methods

  • Park, Sungho (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Kim, Byung Jun (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Kang, Seong Jun (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Cho, Nam-Kwang (Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University)
  • Received : 2018.05.17
  • Accepted : 2018.06.20
  • Published : 2018.11.15
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Abstract

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea

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