• 한국전기전자재료학회논문지
• /
• 제13권8호
• /
• pp.658-666
• /
• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• ETRI Journal
• /
• 제37권6호
• /
• pp.1135-1142
• /
• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1779-1781
• /
• 2000

Pd doped $SnO_2$ thin film sensors were prepared on alumina substrate by rf magnetron sputtering method. The sensitivity of thin film was investigated by varying the heat-treatment temperature, film thickness and gas species. The thin film heat-treated at 600$^{\circ}C$ and film thickness of 5000${\AA}$ showed the highest sensitivity at an operating temperature of 400$^{\circ}C$.

• 한국세라믹학회지
• /
• 제36권11호
• /
• pp.1156-1162
• /
• 1999

• Transactions on Electrical and Electronic Materials
• /
• 제12권2호
• /
• pp.76-79
• /
• 2011

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

• E2M - 전기 전자와 첨단 소재
• /
• 제7권6호
• /
• pp.481-489
• /
• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• 한국진공학회지
• /
• 제10권3호
• /
• pp.289-297
• /
• 2001

가연성 가스의 검지 및 인식을 위하여, SnO$_2$계열의 4가지 종류의 박막을 형성하였다. 감지막 형성을 위하여, Sn, Pt/Sn, Au/Sn 그리고 Pt, Au/Sn 막을 Sn의 열증착과 귀금속의 스퍼터링으로 증착하였다. 증착된 박막들을 $700^{\circ}C$ 정도에서 2 시간 열산화시켜 $SnO_2$계열의 감지막을 형성하였다. 제작된 박막은 tetragonal구조의 $SnO_2$이었고, 가스 흡착을 위한 가스 흡착점과 기공도를 많이 갖고 있었다. 스퍼터로 형성된 박막보다 열산화법으로 형성된 박막이 고감도를 보였다. 제작 박막들은 작업환경기준치정도의 저농도에서 측정 가연성 가스(부탄, 프로판, LPG, 일산화탄소)에 대해 고감도와 재현성을 나타내었다. 특히, 백금(30 $\AA$)을 첨가한 박막이 LPG와 부탄 가스에 대해, 순수 열산화된 $SnO_2$ 박막이 프로판과 일산화탄소에 대하여 가장 고감도를 나타내었다. 이들 센서들의 각 가스별로 차별화된 감도패턴을 이용하여 주성분 분석 기법을 통해 환경기준치(LEL, TLV) 범위에서 부탄, 프로판, LPG, 일산화탄소와 같은 가연성 가스의 종류 인식 및 정량을 인식할 수 있었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권1호
• /
• pp.7-14
• /
• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.

• 한국전기전자재료학회논문지
• /
• 제29권1호
• /
• pp.6-10
• /
• 2016

In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature($600^{\circ}C$), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature($180{\sim}250^{\circ}C$). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.

• Journal of Korean Society for Atmospheric Environment
• /
• 제20권E2호
• /
• pp.69-75
• /
• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.