Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical characteristics of Sn $O_{2}$Si heterojunction solar cells depending on annealing temperature

열처리온도에 따른 $SnO_2$/Si 이종접합 태양전지의 전기적 특성

  • 이재형 (성균관대학교 전기공학과) ;
  • 박용관 (성균관대학교 전기공학과)
  • Published : 1994.11.01
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Abstract

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

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