• 전기화학회지
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• 제17권2호
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• pp.86-93
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• 2014

5 nm의 중형기공(mesopore)을 지녔으며 5~7 nm 굵기의 산화주석($SnO_2$) 나노선 다발이 잘 정렬된 meso-$SnO_2$를 주형합성법을 이용해서 제조하였다. 또한 주형합성법을 변형시켜서 5~7 nm 굵기의 동일한 나노선 다발 사이에 존재하는 중형기공에 주형으로 사용되었던 실리카($SiO_2$)를 일부 남긴 meso-$SnO_2$와 실리카의 복합체인 meso-$SnO_2$/$SiO_2$도 제조하였다. X-선 회절, 질소흡착법, 투과전자현미경을 이용해서 meso-$SnO_2$와 meso-$SnO_2$/$SiO_2$의 구조를 확인하였다. meso-$SnO_2$/$SiO_2$는 meso-$SnO_2$에 비해서 충방전시 발생하는 부피 팽창을 완화할 수 있을 것으로 예측했으며, 순환전압전류곡선, 교류 임피던스 분석, 충방전 전압 Profile 변화를 통해 부피 팽창 완화 효과를 확인하였다. 하지만, 수명 특성 측면에서는 구조 제어 효과가 미비하여, 향후 이를 개선하는 연구가 진행되어야 한다.

• Journal of Electrochemical Science and Technology
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• 제11권1호
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• pp.92-98
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• 2020

SnO₂-based high-capacity anode materials are attractive candidate for the next-generation high-performance lithium-ion batteries since the theoretical capacity of SnO₂ can be ideally extended from 781 to 1494 mAh g^-1. Here 3D etched Cu foam is applied as a current collector for electron path and simultaneously a substrate for the SnO₂ coating, for developing an integrated electrode structure. We fabricate the 3D etched Cu foam through an auto-catalytic electroless plating method, and then coat the SnO₂ onto the self-supporting substrate through a simple sol-gel method. The catalytic dissolution of Cu metal makes secondary pores of both several micrometers and several tens of micrometers at the surface of Cu foam strut, besides main channel-like interconnected pores. Especially, the additional surface pores on etched Cu foam are intended for penetrating the individual strut of Cu foam, and thereby increasing the surface area for SnO₂ coating by using even the internal of Cu foam. The increased areal capacity with high structural integrity upon cycling is demonstrated in the SnO₂-coated 3D etched Cu foam. This study not only prepares the etched Cu foam using the spontaneous chemical reactions but also demonstrates the potential for electroless plating method about surface modification on various metal substrates.

• 한국CDE학회논문집
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• 제11권1호
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• pp.27-40
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• 2006

The exchange of parameterized feature-based CAD models is important for product data sharing among different organizations and automation systems. The role of feature-based modeling is to gonerate the shape of product and capture design intends In a CAD system. A feature is generated by referring to topological entities in a solid. Identifying referenced topological entities of a feature is essential for exchanging feature-based CAD models through a neutral format. If the CAD data contains the modification history in addition to the construction history, a matching mechanism is also required to find the same entity in the new model (post-edit model) corresponding to the entity in the old model (preedit model). This problem is known as the persistent naming problem. There are additional problems arising from the exchange of parameterized feature-based CAD models. Authors have analyzed previous studies with regard to persistent naming and characteristics for the exchange of parameterized feature-based CAD models, and propose a solution to the persistent naming problem. This solution is comprised of two parts: (a) naming of topological entities based on the object spore information (OSI) and secondary name (SN); and (b) name matching under the proposed naming.

• 한국세라믹학회지
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• 제49권3호
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• pp.266-271
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• 2012

The effect of $Bi(Mg_{1/2}Sn_{1/2})O_3$ (BMS) modification on the crystal structure, ferroelectric and piezoelectric properties of $Bi_{1/2}(Na_{0.8}K_{0.2})_{1/2}TiO_3$ (BNKT) ceramics has been investigated. The BMS-substitution induced a transition from a ferroelectric (FE) tetragonal to a nonpolar pseudocubic phase, leading to degradations in the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electric-field-induced strain was significantly enhanced by the BMS substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 633 pm/V under an applied electric field of 6 kV/mm when the BMS content reached 6 mol%. The abnormal enhancement in strain was attributed to the field-induced transition of the pseudocubic symmetry to other asymmetrical structure, which was not clarified in this work.

• 신재생에너지
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• 제2권3호
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 대한안전경영과학회지
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• 제5권4호
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• pp.147-156
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• 2003

Each method for economic evaluation has its own characteristics. Therefore adoption of each of them in evaluation production investment project results in many problems. Hence combination & modification of them are required to perform more accurate evaluation about investment project. This paper discuss evaluation method of investment projects expansion and replacement investment on each line or individual in the production. Generally investment evaluation method has add to a few method by Subsidiary means with use a especial method. And then in this paper, a Taguchi Techniques is presented, which may be effective to the facilities appraisal or improvement. We propose a decision model to incorporates the values assigned by a group of experts on different factors in production. Using this model, SN ratio of taguchi method for each of subjective factors as well as values of weights are used in this comprehensive method for reducing production rate in production management.

• 임산에너지
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• 제17권1호
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• pp.30-35
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• 1998

자유라디칼 반응기구에 의한 그라프팅 반응은 셀룰로오스의 낮은 반응 참여율, 반응의 저조한 반복성, 반응조절의 난이점, 특히 homopolymer의 높은 발생율로 인한 그라프팅 반응의 낮은 치환도 등의 문제를 지니고 있다. 이러한 문제를 해결하기 위하여 음이온중합 방법으로 polyacrylonitrile을 조제한 후 셀룰로오스 아세테이트와 균일계 반응조건에서 이분차 친핵치환(SN2) 반응기구에 의하여 그라프트 공증합 반응을 실시하였으며, 시간의 변화에 다른 겔의 형성과 그라프트 공중합 반응 전 후의 셀룰로오스 아세테이트의 FTIR spectra의 중요한 흡수대를 비교하여 반응을 확인하였다.

• 한국진공학회지
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• 제6권S1호
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• 열처리공학회지
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• 제2권2호
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• pp.33-37
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• 1989

In order to improve hardness uniformity of standard-hardness blocks. experimental procedure was designed using Taguchi Method. For this purpose the following factors were studied: austenitizing temperature, tempering condition, grinding condition, subzero treatment, lapping time, $15{\mu}m$ polishing time, final polishing time. These factors were processed and then ten hardness values were measured on each specimen. SN (signal to noise) ratio for each condition was calculated with standard variations of these values. Finally, from the calculated value of ANOVA on SN ratios, the lapping time was found to be the main factor Better uniformity with longer lapping time implies that residual stress that was formed after quenching is a dominent parameter that affects on the uniformity of hardness. Therefore, step-quenching method was adapted to minimize the residual stress. By this modification of quenching procedure, the hardness uniformity was improved remarkably and the yield ratio was increased from 55% to 88%.