• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4332-4336
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• 2011

The chalcopyrite-type $CuInSe_2$ is a remarkable material for thin film solar cells owing to its electronic structure and optical response. Single-phase sphere-like $CuInSe_2$ nanocrystallite particles were prepared by a facile noninjection method with triethanolamine as the complexing agent and the solvent simultaneously. The period of the reaction was the key to form single-phase $CuInSe_2$ nanocrystals at $240^{\circ}C$. TEM, XRD, XPS, EDX investigations were performed to characterize the morphology and the detailed structure of as-synthesized $CuInSe_2$ nanocrystals. All of the analysis results proved that the synthesized nanocrystals were pure phase and close to the stoichiometric ratio rather than a simple mixture. The band gap of the obtained $CuInSe_2$ nanocrystals was $1.03{\pm}0.03$ eV.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.888-893
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• 2013

In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.911-914
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• 2010

In this paper, the $CuInSe_2$ thin film was prepared by using co-evaporation method in four different substrate temperatures $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. When the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the single-phase $CuInSe_2$ was crystallized. As the temperature increased, it was shown that the thickness of the thin film was decreased with increment of the hall coefficient. When the sample was prepared at $200^{\circ}C$ of the subsrate temperature, the values of band gap energy (Eg), sheet resister and resistivity were measured 0.99 eV, $89.82\;{\Omega}/{\square}$ and $103{\times}10^{-4}\;{\Omega}{\cdot}cm$, respectively.

• 한국표면공학회지
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• 제44권5호
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• pp.185-189
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• 2011

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.97-97
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• 2014

The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 추계학술대회
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• pp.566-569
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• 2006

태양전지는 태양광에너지를 바로 전기에너지로 전환시키는 소자이다. 과거에 많이 연구되던 고품질의 단결정 소자는 높은 에너지 변환효율을 가지고 있으나 가격 경쟁력이 크게 뒤져 일반화되지 못하였다. 최근에는 다결정 태양전지의 응웅 가능성에 대한 연구가 활발히 진행되어 오고 있다. 이중 $CuInSe_2$는 여러 가지 좋은 물성을 가지고 있어서, 저가의 고효율 태양전지를 위한 광흡수층 재료로 가장 주목받고 있다. $CuInSe_2$ 화합물 박막을 제조하기 위해 단위원소를 spttering법 과 Evaporeation법을 사용하여 증착하고 전기로에서 열처리 공정을 사용하여 single-phase 화합물 $CuInSe_2$ 박막을 얻고자 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.295-295
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• 2010

Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.414-415
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• 2005

A solar cell is an element to transform the solar light energy into the electric energy in a moment. The single crystal element of high quality on which many studies were conducted in the past has a high efficiency of energy transformation, but its price competitiveness is so poor that it has failed to be popularized However, recently, in terms of an environment-friendly alternative energy, studies on applicability of the polycrystal solar cell have been actively under way. Among subject substances for such solar cell, $CuInSe_2$ has several good physical properties so that the greatest attention is paid to it as an optical absorption layer material for a low-cost solar cell of high efficiency. In order to manufacture the $CuInSe_2$ compound thin film, the unit element was deposited by using the sputtering method and the evaporation method and the heat treatment process was used in an electric furnace. Thereby, we intended to get a single-phase $CuInSe_2$ compound thin film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.162-165
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• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.