Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of CuInSe2 Thin Film with Various Substrate Temperatures

기판온도에 따른 CuInSe2 박막의 특성

  • Park, Jung-Cheul (Department of Electronics Engineering Kyungwon University) ;
  • Chu, Soon-Nam (Department of Electrical Engineering Kyungwon University)
  • Received : 2010.09.27
  • Accepted : 2010.10.21
  • Published : 2010.11.01
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Abstract

In this paper, the $CuInSe_2$ thin film was prepared by using co-evaporation method in four different substrate temperatures $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. When the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the single-phase $CuInSe_2$ was crystallized. As the temperature increased, it was shown that the thickness of the thin film was decreased with increment of the hall coefficient. When the sample was prepared at $200^{\circ}C$ of the subsrate temperature, the values of band gap energy (Eg), sheet resister and resistivity were measured 0.99 eV, $89.82\;{\Omega}/{\square}$ and $103{\times}10^{-4}\;{\Omega}{\cdot}cm$, respectively.

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References

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