Abstract
The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.