Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Cu(In,Ga)Se2 Thin Film with Substrate Temperature Change

기판 온도 변화에 따른 Cu(In,Ga)Se2 박막에 관한 연구

  • Park, Jung-Cheul (Department of Electrical Engineering, Gachon University) ;
  • Chu, Soon-Nam (Department of Electrical Engineering, Gachon University)
  • Received : 2013.10.14
  • Accepted : 2013.11.04
  • Published : 2013.12.01
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Abstract

In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

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References

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