• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.30-33
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• 1999

본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.825-830
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• 1998

자화된 유도결합형 C4F8 플라즈마로 SiO2를 건식식각시 실리콘 표면에 발생하는 손상과 오염에 대하여 연구하였다. 오염의 분석을 위해서 XPS, SIMS, TEM을 사용하였으며, 손상정도를 측정하기 위해서 HRTEM과 Schottky-diode 구성을 통한 I-V특성 측정을 사용하였다. 유도 결합형 C4F8 플라스마에 0에서 18Gauss까지의 자장이 가해짐에 따라서 실리콘 표면에 생기는 잔류막의 두께가 SiO2식각속도와 선택비의 증가와 함께 증가하였으며, XPS를 통하여 그 조성이 fluorine-rich에서 carbon-rich 한 상태로 변화함을 알 수 있었다. 자장을 가하지 않는 상태에서는 표면에서 $40\AA$부근까지 고밀도의 손상층이 관찰되었으나, 자장을 가함에 따라서 노출된 손상층의 깊이는 깊어지나 그 밀도는 줄어들음을 HRTEM을 통하여 관찰 할 수 있었다. Schottky-diode를 통한 I-V특성곡선의 분석으로 자장이 증가함에 따라서 전기적인 손상이 감소함을 알 수 있었다.

• Journal of IKEEE
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• v.28 no.1
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• pp.104-109
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• 2024

In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga₂O₃/SiC heterojunction diodes. We fabricated Ga₂O₃/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga₂O₃/SiC heterojunction diode. In the N₂ annealed devices, the highest on-state current was measured as 3.06 × 10^-2 A/cm^2, and an increase in carrier concentration of 3.8 × 10¹⁴ cm^-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.205-208
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• 2020

This paper examines the approach, enabled by using SiC power devices, to unify the inverter design for central air conditioning (CAC) system for both single- and 3-phase input, and reduce the PFC inductor size to be PCB-mountable. By using SiC-instead of Si-diode in PFC stage, it is possible to increase the switching frequency from 16kHz to 60kHz to reduce the required PFC inductance from 0.93mH to 0.25mH, thus enable PCB-mounting of inductor. With the next step of using 1200V SiC MOSFET instead of Si-IGBT, the DC link voltage can be boosted from 311Vdc to 550Vdc in PFC stage, allowing the inverter and compressor used in 3-phase input CAC be used for single-phase input as well. Furthermore, using SiC MOSFET in inverter stage can further reduce total loss system total loss to 200.8 W. Simulation and experimental results are presented in the paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.280-284
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• 2011

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.176-182
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• 1992

t-Stress and junction leakage current characteristics of CVD-tungsten have been investigated. Stressversus continuous annealing temperature plot. shows hysteresis curve where the stress level of the cooling curveis higher than that of the heating curve. It is found that the thermal and intrinsic stress of tungsten film depositedby SiH4 reduction is higher than that by Hz reduction.The tungsten film deposited by SiHl reduction is in the tensile stress state below 700"Cnd the stress ofthe film decreses with increasing annealing temperature. The stress state changes into compressive stress atabout 700"Cnd the compressive stress increases rapidly with increasing temperature.Leakage current of the n+/p diode increases rapidly especially in the range of 400-450$^{\circ}$C with increasingdeposition temperature of the CVD-W by SiH4 reduction, which is due to the Si consumption by W encroachment.On the other hand leakage current of the n+/p diode slightly increases with increasing SiH4/WF6 ratio.h increasing SiH4/WF6 ratio.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.346-349
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• 1988

Conductance technique is the moat accurate method and gives more detailed information about interface of the MIS structure than other methods. With the measurement of the equivalent parallel conductance and capacitance, the characterization of Si-SiN interface is developed. The interface state density of Si-SiN is obtained by $8{\times}10^{11}$ - $6{\times}10^{12}(eV^{-1}cm^{-2}$). After the positive B-T stress is performed on the sample, the interface state density gets increased. The interface state density is not effected by the D.C. stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.