Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Effects of Deep Level Defect Variations on Ga2O3/SiC Heterojunction Diodes Due to Post-Annealing Atmosphere

후열처리 분위기에 따른 깊은 준위결함의 변화가 Ga2O3/SiC 이종접합 다이오드에 미치는 영향 분석

  • Seung-Hwan Chung (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Myeoung-Chul Shin (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Mathieu Jarry (Dept. of Physics, Aix-Marseille University) ;
  • Sang-Mo Koo (Dept. of Electronic materials Engineering, Kwangwoon University)
  • Received : 2024.03.25
  • Accepted : 2024.03.29
  • Published : 2024.03.31
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Abstract

In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga2O3/SiC heterojunction diodes. We fabricated Ga2O3/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga2O3/SiC heterojunction diode. In the N2 annealed devices, the highest on-state current was measured as 3.06 × 10-2 A/cm^2, and an increase in carrier concentration of 3.8 × 1014 cm-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.

본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga2O3/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga2O3/SiC 이종접합 소자의 전기적 특성에 미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N2 분위기에서 열처리된 소자에서 3.06 × 10-2 A/cm2로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 1014 cm-3로 증가하는 것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.

Keywords

Acknowledgement

This work was supported by the Fostering Global Talents for Innovative Growth Program through KIAT (P0012451 and P0017308) of the MOTIE and Research Grant from Kwangwoon University in 2024.The authors thank Andrej Kuznetsov at Oslo University (UVSQ) in Oslo and Norway for allowing Research-Visit collaboration of graduate students.

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