• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.24 no.4
• /
• pp.10-16
• /
• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Journal of the Korean Magnetics Society
• /
• v.18 no.2
• /
• pp.67-70
• /
• 2008

$Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) fabricated by sol-gel and vacuum sealed annealing process. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) have been studied by x-ray diffraction(XRD), vibrating sample magnetometer, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The determined lattice constants $a_0$ of x = 0, and 1 are $12.497\AA$, and $12.465\AA$, respectively. The distribution of gallium and iron in $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ is studied by Rietveld refinement. Based on Rietveld refinement results, the terbium and bismuth ions occupy the 24c site, iron ions occupy the 24d, l6a site, and nonmagmetic gallium ions occupy the 16a site. In order to verify the magnetic site occupancy of iron and gallium, we have taken $M\ddot{o}ssbauer$ spectra for $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) at room temperature. From the results of $M\ddot{o}ssbauer$ spectra analysis, the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 60.8 % and 39.2 %, respectively, and the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 74.7 % and 25.3 %, respectively. It is noticeable that all of the nonmagnetic Ga atoms occupy the 16a site by vacuum annealing process.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.1
• /
• pp.8-14
• /
• 2014

In this study, we investigated synthesis and characteristics of gallium oxide ($Ga_2O_3$) powders prepared by precipitation method. $Ga_2O_3$ powders were synthesized using $Ga(NO_3)_3$ as a starting material and $NH_4OH$ as a precipitant. The oxidation temperature of $Ga(OH)_3$ and phase transition temperature of $Ga_2O_3$ was revealed using TG-DSC analysis. The crystal structural change of $Ga_2O_3$ powders was investigated by XRD analysis. The morphologies and size distributions of $Ga_2O_3$ particles were analyzed using SEM.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.11
• /
• pp.1224-1230
• /
• 2001

Single crystals of nanocomposite [GaO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$30H2O, 2, were obtained by the reaction between [GaO4Al12(OH)24(H2O)12]7+ and [Mo7O24]6- clusters in an aqueous solution, analogously to the [AlO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$29.5H2O nanocomposite, 1. The crystal structure of 2 was determined by single crystal x-ray diffraction; space group $C2}c$ (No. 15), a = 27.418(2) $\AA$, b = 15.647(2) $\AA$, c = 23.960(4) $\AA$, $\beta$ = $102.850(9)^{\circ}$, V = 10,021.5(20) $\AA3$ , Z = 4. Detailed analysis of the structural data show that the clusters are held by intimate hydrogen bondings of the surface O2- and OH- groups of the clusters as well as the ionic interactions between the oppositely charged cluster ions.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2008.05a
• /
• pp.24.2-24.2
• /
• 2008

• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.242-244
• /
• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.8
• /
• pp.641-646
• /
• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• Korean Journal of Materials Research
• /
• v.24 no.4
• /
• pp.214-220
• /
• 2014

In this research, a precipitation method was used to synthesize ${\beta}-Ga_2O_3$ powders with various particle morphologies and sizes under varying precipitation conditions, such as gallium nitrate concentration, pH, and aging temperature, using ammonium hydroxide and ammonium carbonate as precipitants. The obtained powders were characterized in detail by XRD, SEM, FT-IR, and TG-DSC. From the TG-DSC result, GaOOH phase was transformed to ${\beta}-Ga_2O_3$ at around $742^{\circ}C$, and weight loss percent was about 14 % when $NH_4OH$ was used as a precipitant. Also, ${\beta}-Ga_2O_3$ formed at $749^{\circ}C$ and weight loss percent was about 15 % when $(NH)_2CO_3$ was used as a precipitant. XRD results showed that the obtained $Ga_2O_3$ had pure monoclinic phase in both cases. When $(NH)_2CO_3$ was used as a precipitant, the particle shape changed and became irregular. The range of particle size was about $500nm-4{\mu}m$ based on various concentrations of gallium nitrate solution with $NH_4OH$. The particle size was increased from $1-2{\mu}m$ to $3-4{\mu}m$ and particle shape was changed from spherical to bar type by increasing aging temperature over $80^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.713-717
• /
• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.201-201
• /
• 2010

본 연구에서는 RF magnetron co-sputtering을 이용하여 Zn-O-Ga 구성비에 따른 광투과도 및 전기적 특성을 연구하였다. 타겟으로 ZnO 및 $Ga_2O_3$ 소결체를 이용하였으며, 두 개의 RF magnetron sputter의 RF power를 동시에 조절하여 타겟의 구성비를 조절하였으며, 기판과 타겟의 거리를 25 mm~75 mm 범위 내에 조절하여 거리에 따른 Zn-O-Ga 박막의 광투과 특성 및 전기적 특성을 관찰하였다. $Ga_2O_3$ 소결체의 magnetron sputter의 RF power를 30 watt에서 100 watt로 증가함에 따라 박막내의 Ga 성분은 0.5%에서 7.4%로 증가하였으며 Zn 성분은 46.3%에서 40.9%로 O성분은 53.2%에서 51.6%로 각각 줄어들었다. 이에 따라 ZnO의 우선방위 (002) 결정각($2{\theta}$)은 34.24에서 33.87로 줄어들었으며, 이동도 $5.5\;cm^2/Vs$ 에서 $1.99\;cm^2/Vs$ 정도로 감소하는 경향을 보였다. 광투과도는 가시광선 영역에서 85% 이상 보였으며, carrier 밀도는 $0.5\;{\sim}\;4.0^*10^{20}/cm^3$로 증가함에 따라 이동도는 $1.5{\sim}5.5\;cm^2/Vs$로 투명전도막의 특성을 보였다.