• Journal of Powder Materials
• /
• v.5 no.3
• /
• pp.184-191
• /
• 1998

The fabrication process and properties of SiC particulate preforms with high volume fraction above 50% were investigated. The SiC particulate preforms were fabricated by vacuum-assisted extraction method after wet mixing of SiC particulates of 48 ${\mu}m$ in diameter, $SiO_2$ as inorganic binder, cationic starch as organic binder and polyacrylamide as dispersant in distilled water. The SiC particulate preforms were consolidated by vacuum-assisted extraction, and were followed by drying and calcination. The drying processes were consisted with natural drying at $25^{\circ}C$ for 36 hrs and forced drying at 10$0^{\circ}C$ for 12 hrs in order to prevent the micro-cracking of SiC particulates preform. The compressive strengths of SiC particulate preforms were dependent on the inorganic binder content, calcination temperature and calcination time. The compressive strength of SiC preform increased from 0.47 MPa to 1.79 MPa with increasing the inorganic binder content from 1% to 4% due to the increase of $SiO_2$ flocculant between the interfaces of SiC particulates. The compressive strength of SiC preform increased from 0.90 MPa to 3.21 MPa with increasing the calcination temperatures from 800 to 120$0^{\circ}C$ under identical calcination time of 4hrs. The compressive strength of SiC preform increased from 0.92 to 1.95 MPa with increasing the calcination time from 2 hrs to f hrs at calcination temperature of 110$0^{\circ}C$. The increase of compressive strength of SiC preform with increasing the calcination temperature and time is due to the formation of crystobalite $SiO_2$ phase at the interfaces of SiC particulates.

• Journal of Powder Materials
• /
• v.17 no.1
• /
• pp.13-22
• /
• 2010

The unique features of spark plasma sintering process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. $\beta$-SiC powder with 0, 2, 6, 10 wt% of $\alpha$-SiC particles (seeds) and 4 wt% of Al-B-C (sintering aids) were spark plasma sintered at $1700-1850^{\circ}C$ for 10 min. The heating rate, applied pressure and sintering atmosphere were kept at $100^{\circ}C/min$, 40 MPa and a flowing Ar gas (500 CC/min). Microstructural development of SiC as function of seed content and temperature during spark plasma sintering was investigated quantitatively and statistically using image analysis. Quantitative image analyses on the sintered SiC ceramics were conducted on the grain size, aspect ratio and grain size distribution of SiC. The microstructure of SiC sintered up to $1700^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at $1750^{\circ}C$ and the plate-like grains interlocking microstructure had been developed by increasing sintering temperature. The introduction of $\alpha$-SiC seeds into $\beta$-SiC accelerated the grain growth of elongated grains during sintering, resulting in the plate-like grains interlocking microstructure. In the $\alpha$-SiC seeds added in $\beta$-SiC, the rate of grain growth decreased with $\alpha$-SiC seed content, however, bulk density and aspect ratio of grains in sintered body increased.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.51 no.5
• /
• pp.408-419
• /
• 2006

A pot experiment was conducted for two years to evaluate the effects of purified Si fertilization combined with $^{15}N$ on the nutrient uptake, plant growth characteristics, and photosynthetic characteristics of rice in water melon cultivated soil. In 2002, plant height was positively affected at 25 DAT (Day After Transplanting) by Si fertilization in 100%N treatment. However, in 2003, plant height at 25 DAT was negatively affected by Si fertilization in low N level but it was reversed in high N level with initial increase of plant height. Tiller number per pot was positively affected by N and Si fertilization level, especially for high N fertilized treatment. Leaf color was positively affected by Si fertilizatlon in no N fertilized pots, however, Si was not effected in 50%N and 100%N fertilized treatments. N harvest index (NHI) increased with increased Si fertilization in no N plots, however it decreased with increasing of N fertilization level. Nitrogen use efficiency (NUE) decreased with increasing of fertilized N but Si fertilization increased NUE in 50%N plots, however, it was not different by the Si fertilization level in 100%N plots. In 50%N+200%Si plots, NUE was greatest with 130 and shoot N content was $16.2g-N/m^{2}$. N content ($g/m^{2}$) in rice plant increased with increasing Si fertilization in no N plots at panicle initiation stage, 50 and 100%N plots at heading stage and all N treatment at harvesting time. This was mostly more efficient in late growth stage than early growth stage. The concentration (%) of P and K increased with increasing N fertilization level at heading and harvesting but it was not significantly different by the Si fertilization treatment except a little decreasing with increasing Si fertilization level at heading. Potassium content was also not significantly related with N fertilization level except increasing with Si fertilization level at panicle initiation stage. Plant Ca content (%) decreased with increasing of Si fertilization at heading stage and Si fertilization increased Ca content at panicle initiation stage and heading stage and it increased with increasing of Si fertilization level. Photosynthetic activity was not directly related with Si fertilization amount, however, Fluorescent factors, Fv'/Fm' and PsII, were positively affected by Si fertilization level. In conclusion, N fertilization in Si 200% fertilized condition should be reduced by about 50% level of recommended N fertilization for rice cropping in green-house water-melon cultivated paddy field. However, improvement of Ps by Si fertilization could not be attributed to Ps activity in the same leaf area but because of increased total leaf area per pot improved fluorescent characteristics.

• Journal of Sensor Science and Technology
• /
• v.6 no.3
• /
• pp.200-206
• /
• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Journal of Korea Foundry Society
• /
• v.33 no.1
• /
• pp.22-31
• /
• 2013

In order to develop an aluminum alloy, that can combine high thermal conductivity and good castability and anodizability, aluminum alloys with low Si content, such as Al-(0.5~1.5)Mg-1Fe-0.5Si and Al-(1.0~1.5)Si-1Fe-1Zn, were designed. The developed aluminum alloys exhibited 170~190% thermal conductivity (160~180 W/mK), 60~85% fluidity, and equal or higher ultimate tensile strength compared with those of the ADC12 alloy. In each developed alloy system, the thermal conductivity decreased and the strength increased with the increment of Mg and Si, which are the significant alloying elements. The fluidity was in reverse proportion to the Mg content and in proportion to the Si content. The Al-(0.5~1.5)Mg-1Fe-0.5Si alloys exhibited better fluidity in thick-wall castings, while the Al-(1.0~1.5)Si-1Fe-1Zn alloys were better in thin-wall castability due to their lower surface energies. The fluidity behavior was complexly affected by the heat release for the solidification, viscosity, solidification range, and the type, quantity, and formation juncture of the main secondary phase.

• Journal of the Korean Vacuum Society
• /
• v.18 no.1
• /
• pp.24-29
• /
• 2009

The SiOC film as inter layer insulator was researched the reason of the decreasing the dielectric constant by the ionic polarization and electronic polarization, respectively. The dielectric constant was measured using the conventional C-V measurement system, and the reflective index owing to the electronic polarization. Two kinds of dielectric constants were compared and then induced the origin of low-k materials. The chemical properties of the SiOC film were analyzed by the FTIR spectra, and the carbon content was obtained by the deconvoluted data of FTIR spectra. The variation of the carbon content tended to similar to the trend of reflective index, but was in inverse proportion to the dielectric constant. The effect of the electronic polarization did not affect the decreasing the dielectric constant, however the ionic polarization decreased effectively the dielectric constant of the SiOC film.

• Korean Journal of Materials Research
• /
• v.12 no.1
• /
• pp.3-9
• /
• 2002

The corrosion behavior of alloys in a molten salt was investigated along with the oxidation characteristics in the air. The basic composition of alloys in the study was Fe-25Ni-7Cr with Si and RE(rare-earth metal) as additives. The corrosion rate of the alloys was low in a molten salt of LiCl while the rate was high in the mixed molten salt of LiCl and $Li_2O$. When Si is added to the base alloy of Fe-25Ni-7Cr, corrosion resistance was improved as the Si content is increased up to 3%, however, it was observed that the corrosion resistance was getting worse as the Si content is increased. The base alloy with 2.43% of Si and 0.9% of RE(KSA-65), showed higher corrosion rate compared to that of KSA-63 alloy with an equivalent amount of only Si. The corrosion resistance of KSA-65 was similar to that of the base alloy(KSA-60). The oxidation resistance of KSA-65 alloy was greatly increased even at $850^{\circ}C$ for a long term exposure.

• Journal of Powder Materials
• /
• v.14 no.4
• /
• pp.272-276
• /
• 2007

P-type thermoelectric material $Si_{0.8}Ge_{0.2}$ was sintered by Hot Press process (HP) and the effect of boron ($0.25{\sim}2$ at%) addition on the thermoelectric properties were reported. To enhance the thermoelectric performances, the $Si_{0.8}Ge_{0.2}$, alloys were fabricated by mechanical alloying (MA) and HP. The carrier of p-type SiGe alloy was controlled by B-doping. The effect of sintering condition and thermoelectric properties were investigated. B-doped SiGe alloys exhibited positive seebeck coefficient. The electrical conductivity and thermal conductivity were increased at the small amount of boron content ($0.25{\sim}0.5$ at%). However, they were decreased over 0.5 at% boron content. As a result, the small addition of boron improved the Z value. The Z value of 0.5 at% B doped $Si_{0.8}Ge_{0.2}$ B alloy was $0.9{\times}10{-4}/K$, the highest value among the prepared alloys.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.6
• /
• pp.580-586
• /
• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.346-352
• /
• 2000

We investigated the oxidation behavior of poly $Si_{1-x}Ge_x$ films (X=0.15, 0.42) at $700^{\circ}C$ in wet oxidation ambients and analyzed the oxide by XPS, RBS, and cross-sectional TEM. In the case of poly $Si_{0.85}Ge_{0.15}$ films, $SiO_2$ was formed on the poly $Si_{1-x}Ge_x$ films and Ge was rejected from growing oxide, subsequently leading to the increase of Ge content. In the case of poly $Si_{0.58}Ge_{0.42}$ films, we found that $SiO_2-GeO_2$ were formed on the poly $Si_{1-x}Ge_x$ films due to high Ge content. Finally, we proposed the oxidation model of poly $Si_{1-x}Ge_x$ films.