Journal of Sensor Science and Technology (센서학회지)
- Volume 6 Issue 3
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- Pages.200-206
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- 1997
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
A Study on Alkali ion-Sensitivity of $Si_{x}O_{y}N_{z}$ Fabricated by Low Pressure Chemical Vapor Deposition
저압화학기상 성장법으로 제작된 $Si_{x}O_{y}N_{z}$ 의 알칼리이온 감지성에 관한 연구
- Shin, P.K. (Univ. of Erlangen-Nuernberg) ;
- Lee, D.C. (Dept. of Electrical Eng., Inha Univ.)
- Published : 1997.05.31
Abstract
Using
열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로
Keywords
- ISFETs(ion-Sensitive Field-Effect-Transistors);
- silicon oxynitride;
- LPCVD(Low Pressure Chemical Vapour Deposition);
- ion implantation;
- alkali ion-sensitivity