• 대한안전경영과학회지
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• 제9권1호
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• pp.197-211
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• 2007

The power of semiconductor, Korea is continuously constructing semiconductor production line for keeping a front-runner status. however, studies and data about potential risks in semiconductor factory are still short. If fire does not initially suppressed, the fire causes a great damage. To decrease fire risk factors, in addition to fire fighting safety equipment, more important thing is how to design and construct fire protection system. The current fire protection codes about semiconductor factory come under functional law, and this law is short of consideration about particularity of factory. The existing prescriptive fire codes depending on experience compose without evident engineering verifications, thus equipments which is created by the current prescriptive fire code may bring about a variety of problems. For example, the design under the current regulation can not cope with the excessive investments, low efficiencies, and the diversifying construction designs and be applied to the quick changes of new technologies. Ergo, an optimal design for fire protection is to equip fire protection arrangements with condition and environment of production field. Manufacturing factory of semiconductors is a windowless airtight space. And for cleanliness, there exists strong flow of cooperation. Therefore, there is a need for fire safety design that meets the characteristic of a clean room. Accordingly, we are to derive smoke flow according to cooperation process within a clean room and construction plan of an optimal sensor system. In this study, in order to confirm the performance of proposed smoke-exhaust equipment and suggest efficient smoke exhaust device when there is a fire of 1MW of methane in the clean room of company H, we have implemented fire simulation using fluid dynamics computation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.1183-1184
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• 2008

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.21-24
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• 2003

Seam seal welding on the semiconductor package is a process for sealing the packages of semi-conductors, crystal parts, saw filters and oscillators with lid plate by seam welding. This paper presents the development process of automatic seam seal welding system. In this process, the process algorithm, high precision welding current control, design of welding head, high speed and high precision feeding mechanism and user interface process control program technologies are included.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권1호
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• pp.61-66
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• 2009

We have investigated the noise sensitivity of low noise amplifier (LNA) at different frequency. This noise sensitivity analysis provides insights about noise parameters and it is very beneficial for making appropriate design trade-offs. From this work, the circuit designer can choose the adequate noise parameters tolerances.

• 반도체디스플레이기술학회지
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• 제14권1호
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• pp.45-49
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• 2015

Process gases with vapor or liquid phase as well as gas phase may experience alteration in itself or be contaminated in the fluid pipe to the process chamber. And thus it result in as particles or defects on the substrates in semiconductor, LCD, LED manufacturing. Purifiers and filters are used for control of contamination. However, none of detection device is available in the delivery line. In this paper, we propose simple device with lighting and sensing in order to predict contamination of the fluid or the tube wall. For some general purpose gases, it showed constant voltage output regardless of the flow rates. But, the smoke and the moisture in the air lowered the figure due to its concentration. Numerical values for several solid and liquid media were obtained. And, the operating temperature tendency was investigated.

• 조명전기설비학회논문지
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• 제18권1호
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• pp.105-114
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• 2004

본 논문에서 반도체 소자에 대한 DC 파라미터 검사를 위한 회로를 설계하였다. DC 파라미터 검사기는 반도체 소자의 DC 특성을 검사하는 시스템 이다. 본 논문에서 설계한 회로에서는 파라미터를 검사하기 위해 전압(전류)인가 전류(전압)측정 방법을 사용하도록 회로를 설계하였다. 설계한 회로를 OR-CAD를 사용하여 실험하였으며, 설계된 회로의 실험결과를 통해 좋은 성능을 가짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.187-192
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• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.575-576
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• 2008

This paper presents a design of a charge pumping circuit for LCD Driver IC. The charge pumping circuit consists of a control block, a VCIOUT generating block, a DDVDH generating block, a VGH/VGL generating block, and VCL generating block. It generates various higher and lower voltage than supply voltage using external control input. Simulation results show that voltages of DDVDH, VGH, VGL, and VCL satisfy the target voltage, and the output DDVDH drives the output current 7mA.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.589-590
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• 2008

This paper describes an improved design of graphic memory for QVGA ($320{\times}240\;RGB$) - scale 262k-color LCD Driver IC. A distributor block is adopted to reduce graphic RAM area, which is accomplished with 1/8 data lines of the previous structure. In line-read operation, the drivabilty of memory array cell is improved by partitioning a word line according to the row address. The proposed graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and verified using Hsim.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.