Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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High Voltage IGBT Improvement of Electrical Characteristics

고내압 IGBT의 전기적 특성 향상에 관한 연구

  • Ahn, Byoung-Sup (Department of Energy Semiconductor Engineering, Far East University) ;
  • Chung, Hun-Suk (Department of Energy Semiconductor Engineering, Far East University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Kim, Seong-Jong (Department of Energy Semiconductor Engineering, Far East University) ;
  • Kang, Ey-Goo (Department of Energy Semiconductor Engineering, Far East University)
  • 안병섭 (극동대학교 에너지반도체학과) ;
  • 정헌석 (극동대학교 에너지반도체학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 김성종 (극동대학교 에너지반도체학과) ;
  • 강이구 (극동대학교 에너지반도체학과)
  • Received : 2012.02.20
  • Accepted : 2012.02.24
  • Published : 2012.03.01
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Abstract

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

Keywords

References

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