• Title/Summary/Keyword: Semiconductive material

Search Result 47, Processing Time 0.017 seconds

Specific Heat and Thermal Conductivity of XLPE Insulator and Semiconductive Materials for 154kV Power Cable (154kV 전력케이블용 XLPE 절연체와 반도전 재료의 비열 및 열전도)

  • Lee, Kyoung-Yong;Yang, Jong-Seok;Choi, Yong-Sung;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.05b
    • /
    • pp.19-24
    • /
    • 2005
  • To improve mean-life and reliability of power cable, we have investigated specific heat (Cp) and thermal conductivity of XLPE insulator and semiconductive materials in 154kV underground power transmission cable. Specimens were respectively made of sheet form with EVA, EEA and EBA added 30wt%, carbon black, and the other was made of sheet form by cutting XLPE insulator in 154kV power cable. Specific heat (Cp) and thermal conductivity were· measured by DSC (Differential Scanning Calorimetry) and Nano Flash Diffusivity. Specific-heat measurement temperature ranges of XLPE insulator were from 20[$^{\circ}C$] to 90[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity were 25[$^{\circ}C$}], 55[$^{\circ}C$] and 90[$^{\circ}C$]. In case of semiconductive materials, the measurement temperature ranges of specific heat were from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity were 25[$^{\circ}C$] and 55[$^{\circ}C$]. From these experimental results, both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

  • PDF

Dielectric Properties of XLPE/Semiconductor Sheet in Power Cables (전력케이블용 XLPE/반도전층의 유전 특성)

  • 이관우;이경용;최용성;박대희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.8
    • /
    • pp.904-909
    • /
    • 2004
  • We studied the dielectric properties and voltage dependence on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor capacitance and tan6 of 22 kV, 154 kV were 52/42 pF and $7.4\times{10}/^{-4}, 2.15\times{10}^{-4}$, respectively in these results, the trend was increased with the increase of temperature the tan$\delta$ of XLPE/semiconductive layer and XLPE/water/ semiconductive layer were increased as compared with that of XLPE Temperature reliability of tan$\delta$ was small.

A Study on the Thermal Properties of CNT Reinforced Semiconductive Shield Materials for Power Cables (CNT를 첨가한 전력케이블용 반도전 재료의 열적특성에 관한 연구)

  • Yang, Hoon;Kook, Jeong-Ho;Bang, Jeong-Hwan;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.12
    • /
    • pp.1062-1067
    • /
    • 2007
  • In this paper, we have investigated thermal properties of semiconductive shield materials for power cables. EEA (Ethylene Ethyl Acrylate) was used for base polymer and TGA (Thermal Gravimetric Analysis) and AFM (Atomic Force Microscope) were investigated with various carbon black and CNT (carbon nanotube) contents. When CNT reinforced composites and conventional composite were investigated with TGA, we knew that thermal properties of CNT reinforced composite were better than them of conventional composite. To investigate roughness, we used AFM. Before and after aging, AFM was applied and after aging, roughness was increased. As a result, suitable CNT and CB(carbon black) content is CNT:CB=50:50.

Electrical and Mechanical Properties of Semiconductive Composites for DC Power Cable (직류 전력케이블용 반도전 복합체의 전기적·기계적 특성)

  • Lee, Ki-Joung;Seo, Bum-Sik;Yang, Jong-Seok;Seong, Baeg-Yong;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.2
    • /
    • pp.119-125
    • /
    • 2013
  • In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

Thermal Properties of Semiconductive Composites for DC Power Cable (직류 전력케이블용 반도전 복합체의 열적 특성)

  • Lee, Ki-Joung;Seo, Bum-Sik;Yang, Jong-Seok;Seong, Baeg-Yong;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.1
    • /
    • pp.49-55
    • /
    • 2013
  • In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

A Study on Thermal Properties and Impurities Measurement of Semiconductive Shield by ICP-AES (ICP-AES에 의한 반도전재료의 불순물 측정 및 열적특성에 관한 연구)

  • Lee, Kyoung-Yong;Choi, Yong-Sung;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07a
    • /
    • pp.489-494
    • /
    • 2004
  • In this paper, we investigated impurities content and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES(Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter. And then heat capacity(${\Delta}H$) and melting temperature(Tm), specific heat(Cp) were measured by DSC(Differential Scanning Calorimetry). The dimension of measurement temperature was $0[^{\circ}C]\;to\;200[^{\circ}C]$, and rising temperature was $4[^{\circ}C/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result also density was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat capacity, melting temperature, and specific heat from the DSC results were simultaneously decreased according to increasing the content of carbon black. Because metallic impurities of carbon black having Fe, Co, Mn, A1 and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

  • PDF

Chemical Properties of Semiconductive Shield in Power Cable by FT-ATR (FT-ATR을 사용한 전력케이블내 반도전 재료(층)의 화학적 특성)

  • Lee, K.Y.;Choi, Y.S.;Nam, J.C.;Park, D.H.
    • Proceedings of the KIEE Conference
    • /
    • 2004.11a
    • /
    • pp.117-119
    • /
    • 2004
  • To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

  • PDF

Preparation and Characterization of MgO Doped $Fe_2O_3$ Semiconductive Electrodes for Water Photodissociation

  • Kim, Il-Kwang;Somorjai, Gabor A;Kim, Youn-Geun
    • Bulletin of the Korean Chemical Society
    • /
    • v.12 no.1
    • /
    • pp.13-17
    • /
    • 1991
  • The preparation and characterization of semiconductive electrodes of MgO doped $Fe_2O_3$ were investigated. Pellets of MgO doped $Fe_2O_3$ were sintered at high temperatures between 1300$^{\circ}$C and 1400$^{\circ}$C and quenched rapidly in distilled water. The surfaces were analyzed by X-ray diffraction and scanning Auger electron spectroscopy. The surfaces of pellets contained both corundum structure ($Fe_2O_3$) and spinel structure ($Mg_xFe_{3-x}O_4$). Electrodes made of this material gave comparable anodic and cathodic photocurrents under illumination. The cathodic and anodic photocurrent on these photoelectrodes were verified high at 5-10 wt. percent that is critical doping amounts.

Partial Discharge Diagnosis of Interface Defect by the Distribution Statistical Analysis (분포 통계 해석에 의한 계면 결함 부분방전 진단)

  • Cho, Kyung-Soon;Lee, Kang-Won;Kim, Won-Jong;Hong, Jin-Woong;Shin, Jong-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.4
    • /
    • pp.348-353
    • /
    • 2008
  • Most of the high voltage insulation systems, such as the power cable joint having hetero interface, are composed of more than two different insulators to improve insulating performance. The partial discharge(PD) in these hetero interface is expected to affect the total insulation performance. Thus, it is important to study electrical properties on these interfaces. This study described the influence of copper and semiconductive substance defects on $\Phi$-q-n distribution between the interface of the model cable joints to classify PD source. PD was sequentially detected for 600 cycles of the applied voltage. The K-means cluster analysis has been analyzed to investigate the $\Phi$-q-n distribution. The skewness-kurtosis(Sk-Ku) plot from K-means clustering results was defined to quantify cluster distribution and classify distribution patterns. The Sk-Ku plot is composed of skewness and kurtosis along abscissa and ordinate which indicate the asymmetry and the sharpness of distribution. As a result of the Sk-Ku plot, it was confirmed that the data was distributed in 1st 2nd and 3rd quadrant at copper foreign substance defect, but in case of semiconductive foreign substance, the data was distributed in 2nd quadrant only.

Electrical properties of XLPE as contents of additive in semicon (반도전내의 첨가제 함량에 따른 XLPE의 전기적 성질)

  • 조준상;서광석;변재동;이건주
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.11a
    • /
    • pp.203-206
    • /
    • 1998
  • Effects of types of semicon compounds on electrical properties of XLPE were investigated. The amounts of charge of XLPE were changed with the contents of additive included in semicon electrodes, but homocharge in cathode was observed. In the aging experiment under high voltage, it was found that semiconductive layer with high impurity contents played an important role in the decrease of ACBD strength of XLPE.

  • PDF