Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Partial Discharge Diagnosis of Interface Defect by the Distribution Statistical Analysis

분포 통계 해석에 의한 계면 결함 부분방전 진단

  • 조경순 (광운대학교 전기공학과) ;
  • 이강원 (광운대학교 전기공학과) ;
  • 김원종 (광운대학교 전기공학과) ;
  • 홍진웅 (광운대학교 전기공학과) ;
  • 신종열 (삼육대학교 카메카트로닉스학과)
  • Published : 2008.04.01
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Abstract

Most of the high voltage insulation systems, such as the power cable joint having hetero interface, are composed of more than two different insulators to improve insulating performance. The partial discharge(PD) in these hetero interface is expected to affect the total insulation performance. Thus, it is important to study electrical properties on these interfaces. This study described the influence of copper and semiconductive substance defects on $\Phi$-q-n distribution between the interface of the model cable joints to classify PD source. PD was sequentially detected for 600 cycles of the applied voltage. The K-means cluster analysis has been analyzed to investigate the $\Phi$-q-n distribution. The skewness-kurtosis(Sk-Ku) plot from K-means clustering results was defined to quantify cluster distribution and classify distribution patterns. The Sk-Ku plot is composed of skewness and kurtosis along abscissa and ordinate which indicate the asymmetry and the sharpness of distribution. As a result of the Sk-Ku plot, it was confirmed that the data was distributed in 1st 2nd and 3rd quadrant at copper foreign substance defect, but in case of semiconductive foreign substance, the data was distributed in 2nd quadrant only.

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References

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