• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.1528-1535
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• 2009

Characteristics of R-22 and R-134a two-phase vaporization in horizontal small tubes were investigated experimentally. In order to obtain the local heat transfer coefficients, the test was ran under heat flux range of 10 to $40\;kW/m^2$, mass flux range of 200 to $600\;kg/m^2s$, saturation temperature range of 5 to $10^{\circ}C$, and quality up to 1.0. The test section, which was made of stainless steel tube and heated uniformly by applying an electric current to the tube directly, have inner tube diameters of 0.5, 1.5 and 3.0 mm, and lengths of 0.33 and 2.0 m. The effects on heat transfer coefficient of mass flux, heat flux and inner tube diameter were presented. The experimental heat transfer coefficients were compared with the predictions using existing heat transfer coefficient correlations. A new boiling heat transfer coefficient correlation based on the superposition model, with considering the laminar flow, was developed.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.1141-1146
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• 2009

Experimental investigation on two-phase flow boiling heat transfer of R-410A and R-134a in horizontal small tubes is reported. The pressure drop and local heat transfer coefficients were obtained over heat flux range of 5 to $40\;kW/m^2$, mass flux range of 70 to $600\;kg/m^2s$, saturation temperature range of 2 to $12^{\circ}C$, and quality up to 1.0 in test section with inner tube diameters of 3.0 and 0.5 mm, and lengths of 2000 and 330 mm, respectively. The section was heated uniformly by applying a direct electric current to the tubes. The effects of mass flux, heat flux, and inner tube diameter, on pressure drop and heat transfer coefficient are presented. The experimental results are compared against several existing correlations. A new boiling heat transfer coefficient correlation based on the superposition model for refrigerants in small tubes is developed.

• 대한전자공학회논문지SD
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• 제48권10호
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• pp.54-61
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• 2011

본 논문에서는 intrinsic-body cylindrical/surrounding gate SOI MOSFET의 I-V 특성 도출을 위한 간단한 해석적 모델을 제시하였다. Intrinsic 실리콘 채널 영역에서의 Poisson 방정식과 gate oxide 내에서의 Laplace 방정식을 해석적으로 풀어 소스와 드레인 양단 끝에서의 표면 전위 분포를 bisection method를 이용하여 구하였다. 구해진 표면 전위를 바탕으로 closed-form의 I-V 특성 식을 도출하였다. 도출된 I-V 특성 표현 식을 모의 실험한 결과, 소자의 parameter와 가해진 bias 전압에 대한 비교적 정확한 의존성을 확인할 수 있었다.

• 전기전자학회논문지
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• 제22권3호
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• pp.759-766
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• 2018

This paper presents a high-speed axial-flux machine which utilizes the idea of sinusoidal shaped pole combined with a consequent iron-pole. The target of the proposed machine is the cost reduction of the relatively expensive Samarium-Cobalt (SmCo) permanent magnet (PM) material and the torque per PM volume improvement by using sinusoidal consequent-pole rotor. The effectiveness of the proposed machine is validated by comparing it with conventional consequent-pole and with conventional PM machines using 3-D finite element method (FEM) simulations. The comparison and analysis is done in terms of back electro-motive force (back-EMF) harmonic contents, torque per PM volume and torque ripple characteristics. The simulation results show that the proposed machine is suitable and cost-effective for high-speed and high torque per PM volume applications. Furthermore, due to the consequent pole, the magnetic flux saturation and the overload current torque-capability are also presented and discussed in the paper.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.48-50
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• 2005

As technology is developed, customers want to use many functions in one system. Manufacturers want to reach the customer's needs, make systems more small, thin, light-weight. To make them real, it is necessary to make components to be small and thin. But components of power stage are big, thick and heavy-weighted yet. especially power inductor is the most significant component. This paper proposed a novel chip-type power inductor I-type inductor. Inductor that proposed has 3225-size, 5.6uH and 1.3A of max saturation current. And it has $R_{DC}$ of $0.25{\Omega}$ which is smaller than $0.45{\Omega}$ of chip-type inductor and $0.9{\Omega}$ of coil-type inductor.

• 대한간호학회지
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• 제46권2호
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• pp.226-237
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• 2016

Purpose: The purpose of this qualitative study was to explore the workplace bullying experience of Korean nurses. Methods: Participants were twenty current or former hospital nurses who had experienced workplace bullying. Data were collected through focus group and individual in-depth interviews from February to May, 2015. Theoretical sampling method was applied to the point of theoretical saturation. Transcribed interview contents were analyzed using Corbin and Strauss's grounded theory method. Results: A total of 110 concepts, 48 sub-categories, and 17 categories were identified through the open coding process. As a result of axial coding based on the paradigm model, the central phenomenon of nurses' workplace bullying experience was revealed as 'teaching that has become bullying', and the core category was extracted as 'surviving in love-hate teaching' consisting of a four-step process: confronting reality, trial and error, relationship formation, and settlement. The relationship formation was considered to be the key phase to proceed to the positive settlement phase, and the participants utilized various strategies such as having an open mind, developing human relationships, understanding each other in this phase. Conclusion: The in-depth understanding of the workplace bullying experience has highlighted the importance of effective communication for cultivating desirable human relationships between nurses.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.219.1-219.1
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• 2014

전자소자 산업의 미세화 및 대형화에 따라 플라즈마 밀도, 전위, 온도, 균일도 등 과 같은 플라즈마 특성을 제어하는 것은 차세대 플라즈마 장치 개발에 있어 매우 중요한 요소라고 할 수 있다. 특히, 급격한 소자의 미세화에 따라 플라즈마 공정을 통해 발생할 수 있는 damage는 큰 issue가 되어 왔고, 많은 연구자들은 이를 해결하기 위해서 다각적인 노력을 진행해 왔다. 그중 높은 전자 온도는 높은 전자 에너지에 의해 공정 중 소자를 손상 시키는 주된 원인이라고 보고되고 있으며, 이에 대한 제어기술은 매우 중요하다고 할 수 있다. 본 연구에서는 서로 다른 두 개의 내/외측으로 나뉘어진 나선형 모양의 ICP 안테나를 이용 하여 연구를 진행하였다. 내측의 안테나에는 2 MHz를 연결 하였으며, 외측의 안테나에는 13.56 MHz를 연결 하였으며, 내/외측 안테나에 각각 pulse mode로 입력전력을 인가해 줌으로써 플라즈마의 특성을 관찰하였다. Pulse / CW (Continuous Wave) mode에 있어서 전자온도의 측정을 위해 emissive probe 를 이용하여 plasma potential과 floating potential을 측정하였으며, 이를 통하여 전자온도를 계산하여 구할 수 있었다. Duty ratio 및 pulsing frequency의 변화에 따른 전자온도의 변화를 확인 할 수 있었으며, 그에 따른 플라즈마 균일도를 ion saturation current를 측정함으로써 관찰할 수 있었다. 실제 식각 공정에 있어서 Pulsing 조건에 따른 식각 특성을 관찰하기 위해, SiO2, ACL (Amorphous Carbon Layer)에 대해 식각을 진행하였으며, 식각 메커니즘 분석을 위해 이온에너지 분포의 변화를 PSM (Plasma Sampling Mass-spectroscopy)을 이용하여 측정하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.