Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.185-190
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- 2003
Study on the Organic Gate Insulators Using VDP Method
VDP(Vapor Deposition Polymerization) 방법을 이용한 유기 게이트 절연막의 대한 연구
- Pyo, Sang-Woo (Hongik Univ.) ;
- Shim, Jae-Hoon (Hongik Univ.) ;
- Kim, Jung-Soo (Hongik Univ.) ;
- Kim, Young-Kwan (Dept. of Chemical Eng., Hongik Univ.)
- Published : 2003.07.10
Abstract
In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at