• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.189-191
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• 2018

This paper introduces a novel ZVS interleaved totem-pole PFC with the reduced circulating current and the reverse recovery current of the diodes. With the help of a simple auxiliary inductor, both ZVS turn-on of the main switches and soft turn-off of the body diodes can be achieved. In the proposed totem-pole PFC topology since the switching losses and the reverse recovery losses can be significantly reduced, the typical Si MOSFETs can be employed. In addition the circulating current is reduced by adjusting the switching frequency. The proposed PFC topology can be a low cost solution to achieve high efficiency in high power PFC applications. The validity and the feasibility of the proposed topology is verified by the experimental results with a 3.3kW interleaved totem-pole PFC converter.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.806-808
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• 1993

New soft recovery drive which can alleviate the loss due to reverse recovery of diode is proposed. By using this drive, the reverse current of the diode is minimized and stabilized because there is inner local feedback loop between the turn-on current of the power MOSFET and the reverse recovery current of the diode. The loss and EMI noise can be considerably reduced in this way. Brief operational principle and experimental results are included to verify the usefulness.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.942-943
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• 2008

The boost converter is usually used in power factor correction. The dynamic losses of its output diode are produced during the reverse recovery time. The power efficiency is decreased due to the losses and also it generates the noise. These disadvantages have been remarkably improved by ZCS and ZVS techniques of power factor improvement circuit. Some benefits lead to the achievement of higher power density and the development cost can be decreased. In this paper work, the reverse recovery suppression(RS) PFC method is used. A inductor and a diode are added into the conventional circuit. The switching device, MOSFET is turned off after the reverse recovery current has come to the zero level. The Zero Current Switching(ZCS) is implemented at that time. This power conversion technique improves the efficiency to about 1% and reduces the noise obviously. And the additional inductor can be designed using an original filter core in the circuit. The converter size is reduced effectively.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.525-528
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• 2002

A Novel Zero Current Switching(ZCS) Pulse Width Modulation(PWM) boost converter for reducing two rectifiers reverse recovery related losses Is proposed. The switches of the proposed converter are operating to work alternatively turn-on and turn-off with soft switching(ZVS, ZCS) condition. The reverse recovery related switching losses and EMI problems of the proposed converter eliminates the reverse recovery current of the freewheeling diode(D, Dl) by adding the resonant inductor Lr, in series with the switch S2. The voltage and current stresses of the components are similar to those in its conventional hard switching counterpats. As mentioned above, the characteristics are verified through experimental results.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2572-2574
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• 1999

본논문은 제작된 다이오드 switching시 나타난 전류 증가현상을 관측하고 그 원인을 분석했다. 증가현상을 보이는 구조는 다이오드에 전자를 조사한 소자로 proton을 조사한 구조에 비해서 접합부근에 high defect density 영역이 형성된다. Reverse recovery시에 이영역에 높은 역방향 전계가 형성, 조사에 순간적으로 전류가 증가하게 한다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.50-54
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• 2010

Soft recovery (SR) quasi-resonant converter (QRC) including a Folding snubber network (FSN) is introduced. It is obtained by combining normal quasi-resonant converter with folding snubber network of which the surrounding components are composed of passive devices only (diodes and capacitors). The reverse recovery loss of the main rectifier diode is eliminated by this method utilizing quasi resonance with Folding snubber network. By realizing soft switching condition, the proposed converter has PWM capability with high efficiency and is suitable for high output current and high power DC to DC converter application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.