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Switching Characteristics Enhancement of PT Type Power Diode using Proton Irradiation Technique

양성자 주입기술을 이용한 PT형 전력다이오드의 스위칭 특성 향상

  • 김병길 (위덕대학교 전자공학부) ;
  • 최성환 (경북대학교 전자전기컴퓨터학부) ;
  • 이종헌 (페어차일드 코리아(주) Discrete팀) ;
  • 배영호 (위덕대학교 전자공학부)
  • Published : 2006.03.01

Abstract

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

Keywords

References

  1. 김병길, 최성환, 이종헌, 배영호, '입자 조사에 의한 PT형 전력 다이오드의 스위칭 특성 향상', 한국전기전자재료학회 2005추계학술대회 논문집, 18권, p. 16, 2005
  2. N. Keskitalo, A. Hallen, F. Masszi, and J. Olsson, 'Simulation of forward bias injection in proton irradiated silicon pn-junctions', Solid State Electronics, Vol. 39, No.7, p. 1087, 1996 https://doi.org/10.1016/0038-1101(95)00417-3
  3. 김상철, 김은동, '전력반도체 기술 및 시장동향', 전기전자재료학회지, 15권, 3호, p. 15, 2002
  4. A. Guerra, K. Andoh, and S. Fimiani, 'Ultra-fast recovery diodes meet today's requirements for high frequency operation and power ratings in SMPS applications', International Rectifier, p. 1, 2000
  5. P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, and R. Mosca 'Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications', Solid State Electronics, Vol 49, Iss. 2, p. 183, 2005 https://doi.org/10.1016/j.sse.2004.08.011
  6. P. Hazdra, K. Brand, J. Rubes, and J. Vobecky, 'Local lifetime control by light ion irradiation : impact on blocking capability of power P-i-N diode', Micro-electronics Journal, Vol. 32, Iss. 5-6, p. 449, 2001
  7. 이강희, 김병길, 이용현, 백종무, 이재성, 배영호, '양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작', 전기전자재료학회논문지, 17권, 12호, p. 1308, 2004
  8. P. Hazdra, J. Vobecky, and K. brand, 'Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques', NIMB, Vol. 186, Iss. 1-4, p. 414, 2002
  9. N. Mohan, T. M. Undeland, and W. P. Robbins, 'Power electronics', John Wiley & Sons Inc., p. 1, 2003
  10. S. Godey, E. Ntsoenzok, D. C. Schmidt, and J. F. Barbot, 'Effect of shallow donors induced by hydrogen on p+n junctions', Materials Science and Engineering B, Vol. 58, Iss. 1-2, p, 108, 1999 https://doi.org/10.1016/S0921-5107(98)00264-5

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