• Title/Summary/Keyword: Resistive Shunt

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Direct Harmonic Voltage Control Strategy of Shunt Active Power Filters Suitable for Microgrid Applications

  • Munir, Hafiz Mudassir;Zou, Jianxiao;Xie, Chuan;Li, Kay;Younas, Talha;Guerrero, Josep M.
    • Journal of Power Electronics
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    • v.19 no.1
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    • pp.265-277
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    • 2019
  • The application of shunt active power filters (S-APFs) is considered to be the most popular approach for harmonic compensation due to its high simplicity, ease of installation and efficient control. Its functionality mainly depends upon the rapidness and precision of its internally built control algorithms. A S-APF is generally operated in the current controlled mode (CCM) with the detection of harmonic load current. Its operation may not be appropriate for the distributed power generation system (DPGS) due to the wide dispersion of nonlinear loads. Despite the fact that the voltage detection based resistive-APF (R-APF) appears to be more appropriate for use in the DPGS, the R-APF experiences poor performance in terms of mitigating harmonics and parameter tuning. Therefore, this paper introduces a direct harmonic voltage detection based control approach for the S-APF that does not need a remote harmonic load current since it only requires a local point of common coupling (PCC) voltage for the detection of harmonics. The complete design procedure of the proposed control approach is presented. In addition, experimental results are given in detail to validate the performance and superiority of the proposed method over the conventional R-APF control. Thus, the outcomes of this study approve the predominance of the discussed strategy.

A 1.5V 70dB 100MHz CMOS Class-AB Complementary Operational Amplifier (1.5V 70dB 100MHz CMOS Class-AB 상보형 연산증폭기의 설계)

  • 박광민
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.743-749
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    • 2002
  • A 1.5V 70㏈ 100MHz CMOS class-AB complementary operational amplifier is presented. For obtaining the high gain and the high unity gain frequency, the input stage of the amplifier is designed with rail-to-rail complementary differential pairs which are symmetrically parallel-connected with the NMOS and the PMOS differential input pairs, and the output stage is designed to the rail-to-rail class-AB output stage including the elementary shunt stage technique. With this design technique for output stage, the load dependence of the overall open loop gain is improved and the push-pull class-AB current control can be implemented in a simple way. The designed operational amplifier operates perfectly on the complementary mode with 180$^{\circ}$ phase conversion for 1.5V supply voltage, and shows the push-pull class-AB operation. In addition, the amplifier shows the DC open loop gain of 70.4 ㏈ and the unity gain frequency of 102 MHz for $C_{L=10㎊∥}$ $R_{L=1㏁}$ Parallel loads. When the resistive load $R_{L}$ is varied from 1 ㏁ to 1 ㏀, the DC open loop gain of the amplifier decreases by only 2.2 ㏈.a$, the DC open loop gain of the amplifier decreases by only 2.2 dB.

AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Shin, Dong-Hwan;Yom, In-Bok;Kim, Jae-Duk;Lee, Wang-Youg;Lee, Chang-Hoon
    • ETRI Journal
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    • v.38 no.5
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    • pp.972-980
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    • 2016
  • An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

Low Power-loss Current Measurement Technique Using Resistive Sensor and Bypass Switch (바이패스 스위치와 저항센서를 이용한 저손실 전류 측정방법)

  • Lee, Hwa-Seok;Thayalan, I. Daniel Thena;Park, Joung-Hu
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.5
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    • pp.416-422
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    • 2012
  • This paper proposes a low power-loss current measurement using a resistor and bypass switch. Conventional current sensing method using a resistor has a disadvantage of power loss which degrades the efficiency of the entire systems. On the other hand, proposed measurement technique operating with bypass-switch connected in parallel with sensing resistor can reduce power loss significantly the current sensor. The propose measurement works for discrete-time sampling of current sensing. Even while the analog-digital conversion does not occur at the controller, the sensing voltage across the sensor still causes ohmic conduction loss without information delivery. Hence, the bypass switch bypasses the sensing current with a small amount of power loss. In this paper, a 90[W] prototype hardware has been implemented for photovoltaic MPPT experimental verification of the proposed low power-loss current measurement technique. From the results, it can be seen that PV power observation is successfully done with the proposed method.

A VHF/UHF-Band Variable Gain Low Noise Amplifier for Mobile TV Tuners (모바일 TV 튜너용 VHF대역 및 UHF 대역 가변 이득 저잡음 증폭기)

  • Nam, Ilku;Lee, Ockgoo;Kwon, Kuduck
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.90-95
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    • 2014
  • This paper presents a VHF/UHF-band variable gain low noise amplifier for multi-standard mobile TV tuners. A proposed VHF-band variable gain amplifier is composed of a resistive shunt-feedback low noise amplifier to remove external matching components, a single-to-differential amplifier with input PMOS transcoductors to improve low frequency noise performance, a variable shunt-feedback resistor and an attenuator to control variable gain range. A proposed UHF-band variable gain amplifier consists of a narrowband low noise amplifier with capacitive tuning to improve noise performance and interference rejection performance, a single-to-differential with gm gain control and an attenuator to adjust gain control range. The proposed VHF-band and UHF-band variable gain amplifier were designed in a $0.18{\mu}m$ RF CMOS technology and draws 22 mA and 17 mA from a 1.8 V supply voltage, respectively. The designed VHF-band and UHF-band variable gain amplifier show a voltage gain of 27 dB and 27 dB, a noise figure of 1.6-1.7 dB and 1.3-1.7 dB, OIP3 of 13.5 dBm and 16 dBm, respectively.

Use of a Rigid-Tipped Microguidewire for the Endovascular Treatment of Cavernous Sinus Dural Arteriovenous Fistulas with an Occluded Inferior Petrosal Sinus

  • Deniwar, Mohamed Adel;Kwon, Boseong;Song, Yunsun;Park, Jung Cheol;Lee, Deok Hee
    • Journal of Korean Neurosurgical Society
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    • v.65 no.5
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    • pp.688-696
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    • 2022
  • Objective : Transvenous embolization (TVE) via an occluded inferior petrosal sinus (IPS) in a cavernous sinus dural arteriovenous fistula (CSDAVF) is challenging, often requiring navigation of a microcatheter through resistive obstacles between the occluded IPS and shunted pouch (SP), although the reopening technique was successfully performed. We report five cases of successful access to the cavernous sinus (CS) or SP using the rigid-tipped microguidewire such as chronic total occlusion (CTO) wire aiming to share our initial experience with this wire. Methods : In this retrospective study, four patients with CSDAVF underwent five procedures using the CTO wire puncture during transfemoral transvenous coil embolization. Puncture success, shunt occlusion, and complications including any hemorrhage and cranial nerve palsy were evaluated. Results : Despite successful access through the occluded IPS, further entry into the target area using neurointerventional devices was impossible due to a short-segment stricture before the CS (three cases) and a membranous barrier within the CS (two cases). However, puncturing these structures using the rigid-tipped microguidewire was successful in all cases. We could advance the microcatheter over the rigid-tipped microguidewire for the navigation to the SP and achieved complete occlusion of the SP without complications. Conclusion : The use of the rigid-tipped microguidewire in the TVE via the occluded IPS of the CSDAVF would be feasible and safe.

A study on characteristics for a resistive SFCL with gold layer (Gold층을 가진 저항형 초전도 한류기에 대한 특성연구)

  • Choi, Hyo-Sang;Hyun, Ok-Bae;Kim, Hye-Rim;Hwang, Si-Dole;Kim, Sang-Joon
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.348-351
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    • 1999
  • We investigated current limiting properties for an SFCL of YBCO thin film coated with an Au layer. The YBCO film of 1 mm wide and 400 nm thick could carry the current 9.6 A$_{peak}$ without quench. The SFCL limited the fault current below 7.6 A$_{peak}$, which otherwise increases above 65 A$_{peak}$ and melted down at the potential fault current of about 100 A$_{peak}$ which is 10 times greater than the quench current. This means that the Au layer successfully protected the superconducting film by dispersing the heat generated at hot spots and electrically shunting the YBCO film.

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Design of CMOS Multifunction ICs for X-band Phased Array Systems (CMOS 공정 기반의 X-대역 위상 배열 시스템용 다기능 집적 회로 설계)

  • Ku, Bon-Hyun;Hong, Song-Cheol
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.12
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    • pp.6-13
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    • 2009
  • For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.