• 제목/요약/키워드: Reaction gas ratio

검색결과 557건 처리시간 0.03초

공정 Simulation에 의한 Laser CVD $SiO_2$막 형성 기구 규명에 관한 연구 (A Study on Deposition Mechanism of Laser CVD $SiO_2$ by Process Simulation)

  • 신상우;이상권;김태훈;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1301-1303
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    • 1997
  • This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

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RF 마그네트론 반응성 스퍼터링 제작된 ZnO/Glass 박막 특성 (Characteristics of ZnO/Glass Thin Films Prepared by RF Magnetron Sputtering)

  • 박용욱;윤석진;최지원;김현재;정현진;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권10호
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    • pp.833-841
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    • 1998
  • ZnO thin films on glass substrate were deposited by on RF mangetron reaction sputter with various grgon/oxygen gas ratios and sbustrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, AFM, XPS, RBS, and electrometer(keithley 617). All films showed a strong perferred orientation along the x-axis on glass substrate, and the chemical stoichiometry of Zn/)=1/1.0 was obtained at Ar/$O_2$ =50/50. Surface roughness and resistivity depended on the argon/oxygen gas ratio. The minimum surface roughness of 20$\AA$ and maximum resistivity of $10^8$ $\Omega$ cm were achieved at Ar/$O_2$=10/90.

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A Study of Reduced and Carburized Reactions in Dry-milled $WO_3+Co_3O_4+C$ Mixed Powders with Different Carbon Content

  • Im, Hoo-Soon;Lee, Wan-Jae
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.648-649
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    • 2006
  • The dry-milling technique was used for mixing and crushing oxides and graphite powders. The ratio of ball-to-powder was 30:1 and argon gas was filled in jar. The excess carbon was $10{\sim}20wt%$ of the stoichiometric amount. The dry-milling was carried for 20 hours. The mixed powders were reduced and carburized at $900{\sim}980^{\circ}C$ for 3 hours flowing Ar gas in tube furnace. The dry-milled powders showed the wide diffraction patterns of X-ray. The reactions of reduction and carburization were completed in 3 hours at $980^{\circ}C$. After the reactions, the mean size of WC particles was about 200 nm. The content of free carbon in WC/Co mixed powders was less as the reaction temperature increased.

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충격관을 이용한 $C_2H_2$의 폭굉특성연구 (A Study on the Detonation Characteristics of $C_2H_2$in Shock Tube)

  • 오규형
    • 한국안전학회지
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    • 제11권4호
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    • pp.64-71
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    • 1996
  • Detonation phenomena of $C_2H_2$were invesgated using the various shock tube. To study the detonation characteristics according to the composition of $C_2H_2-0_2$$_2$ and $C_2H_2$-air mixtures, the composition were varied from 5 to 90% and 5 to 50% of acetylene each other. A spiral ring was installed in the shock tube to study the effect of obstacles in DDT phenomena. Detonation velocities were measured using the photodiode, and the DDT phenomena was visualized using the high speed schlieren photograph. From the experimental result, it was found that the detonation velocity was most high near the 1. 8times the stoichiometric ratio of acetylene. And from the visualization of DDT phenomena, it was found that the detonation wave was strengthened throuth the pile up of small compression wave of burned gas. And the obstacles in shock tube accelerate the detonation reaction by turblent effect of flammable gas mixture.

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Tunable 소자 응용을 위한 PST 박막의 식각특성 (Etching characteristics of PST thin films for tunable device application)

  • 김종식;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.726-729
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    • 2004
  • Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

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Ar/$CF_4$ 고밀도 플라즈마에서(Ba,Sr)$TiO_3$ 박막의 식각 메카니즘에 관한 연구 (A Study on Etching Mechanism of (Ba,Sr)$TiO_3$ in Ar/$CF_4$ High Density Plasma)

  • 김승범;김창일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1550-1552
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    • 1999
  • In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

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WC/Co 초경합금 스크랩 산화물로부터 환원/침탄공정에 의한 WC/Co 복합분말 제조 (Fabrication of WC/Co composite powder from oxide of WC/Co hardmetal scrap by carbothermal reduction process)

  • 이길근;임영수
    • 한국분말재료학회지
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    • 제25권3호
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    • pp.240-245
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    • 2018
  • This study focuses on the fabrication of a WC/Co composite powder from the oxide of WC/Co hardmetal scrap using solid carbon in a hydrogen gas atmosphere for the recycling of WC/Co hardmetal. Mixed powders are manufactured by mechanically milling the oxide powder of WC-13 wt% Co hardmetal scrap and carbon black with varying powder/ball weight ratios. The oxide powder of WC-13 wt% Co hardmetal scrap consists of $WO_3$ and $CoWO_4$. The mixed powder mechanically milled at a lower powder/ball weight ratio (high mechanical milling energy) has a more rapid carbothermal reduction reaction in the formation of WC and Co phases compared with that mechanically milled at a higher powder/ball weight ratio (lower mechanical milling energy). The WC/Co composite powder is fabricated at $900^{\circ}C$ for 6 h from the oxide of WC/Co hardmetal scrap using solid carbon in a hydrogen gas atmosphere. The fabricated WC/Co composite powder has a particle size of approximately $0.25-0.5{\mu}m$.

燃燒氣體의 熱力學的 平衡組成計算에 관한 硏究 (Calculation of thermodynamical equilibrium composition of combustion gases)

  • 허병기;이청종
    • 대한기계학회논문집
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    • 제11권1호
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    • pp.177-188
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    • 1987
  • 본 논문에서는 연소기체의 열력학적 평형조성 계산을 위한 수식을 Gibbs의 자 유에너지 최소화법에 의하여 유도하고 이를 컴퓨터 프로그램화하여, Table 1의 특성을 지닌 연료에 대하여 ⅰ) 연소공기량에 따른 평형조성 및 단열불꽃온도, ⅱ) 연소온도 변화에 따른 평형조성의 변화를 계산함으로써 연소기체의 생성기구를 열력학적으로 해 석하였다.

위성 발사체 액체 로켓 엔진의 Pre-burner 성능 모사 (Simulation of Pre-burner Performance in Liquid-fueled Rocket Engine for Satellite Launch Vehicle)

  • 신지철;정태규;이수용
    • 한국항공우주학회지
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    • 제36권12호
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    • pp.1180-1185
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    • 2008
  • 다단 연소를 수행하는 위성 발사체 액체 로켓 엔진의 예연소기 성능을 모사한 in-house code가 개발되고 검증되었다. CEA (Chemical Equilibrium with Applications)의 해석 알고리듬을 바탕으로 하여 예연소기의 화학 반응을 모델링 하였고, gas dynamics 모델링과 연동시켜 예연소기의 성능을 모사하였다. CEA와 비교한 결과 아주 높거나 아주 낮은 O/F ratio를 제외하고는 계산 값들이 거의 일치함을 보여 주었다. 또한 실제 엔진 (RD-8)의 성능곡선과 비교한 결과 개발된 in-house code의 계산 값들이 타당한 범위 내에서 모사되었고, 정상상태에서는 거의 비슷한 결과 값을 보였다.

고밀도 플라즈마에 의한 $Y_2O_3$ 박막의 식각 메커니즘 연구 (Etch Mechanism of $Y_2O_3$ Thin Films in High Density Plasma)

  • 김영찬;김창일;장의구
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.25.1-28
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    • 2000
  • In this study, $Y_2O_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$were investigated by varying $Cl_2$/($Cl_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$ were 302/min, and 2.4 at $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2 repetitively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2O_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCl, and $YC_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively.

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