Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Deposition Mechanism of Laser CVD $SiO_2$ by Process Simulation

공정 Simulation에 의한 Laser CVD $SiO_2$막 형성 기구 규명에 관한 연구

  • Shin, Sang-Woo (Department of Electrical Engineering, Korea University) ;
  • Lee, Sang-Kwon (Department of Electrical Engineering, Korea University) ;
  • Kim, Tae-Hun (Department of Electrical Engineering, Korea University) ;
  • Sung, Yung-Kwon (Department of Electrical Engineering, Korea University)
  • 신상우 (고려대학교 전기공학과) ;
  • 이상권 (고려대학교 전기공학과) ;
  • 김태훈 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1997.07.21
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Abstract

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

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