Proceedings of the Korean Institute of Navigation and Port Research Conference (한국항해항만학회:학술대회논문집)

Korean Institute of Navigation and Port Research (한국항해항만학회)
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Etch Mechanism of $Y_2O_3$ Thin Films in High Density Plasma

고밀도 플라즈마에 의한 $Y_2O_3$ 박막의 식각 메커니즘 연구

  • 김영찬 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2000.11.01
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Abstract

In this study, $Y_2O_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$were investigated by varying $Cl_2$/($Cl_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$ were 302/min, and 2.4 at $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2 repetitively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2O_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCl, and $YC_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively.

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