• The Magazine of the IEIE
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• v.25 no.7
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• pp.53-63
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• 1998

This paper reviews development trends of ferroelectric memories. Materials requirements, integration issues, device structures are reviewed for 1T-1C and 1Tr type FRAM. Other types of FRAM such as DSRAM and SFRAM are also described. Limitations in FRAM development are discussed for the viewpoint of memory concept and material properties. Finally, novel FRAM structures and operational concepts are proposed in order to avoid such limitations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1033-1044
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• 2002

In this Paper, a new FRAM design technique utilizing grounded-plate PMOS-gate (GPPG) ferroelectric cell is proposed. A GPPG cell consists of a PMOS access transistor and a ferroelectric data storage capacitor. Its plate is grounded. The proposed architecture employs three novel methods for cell operation: 1) $V_{DD}$ -precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore. Because this configuration doesn't need the plate control circuitry, it can greatly increase the memory cell efficiency. In addition, differently from other reported common-plate cells, this scheme can supply a sufficient voltage of $V_{DD}$ to the ferroelectric capacitor during detecting and storing the polarization on the cell. Thus, there is no restriction on low voltage operation. Furthermore, by employing a compact column-path circuitry which activates only needed 8-bit data, this architecture can minimize the current consumption of the memory array. A 4- Mb FRAM circuit has been designed with 0.3-um, triple-well/1-polycide/2-metal technology, and the possibility of the realization of GPPG cell architecture has been confirmed.

• 전기의세계
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• v.52 no.2
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• pp.23-28
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• 2003

• Journal of Radiation Protection and Research
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• v.36 no.1
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• pp.16-23
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• 2011

Accurate measurement of uranium enrichment is very important in nuclear material accountability. The analysis uncertainty of the uranium enrichment measurement with gamma-ray analysis was studied in the present work. FRAM (Fixed energy Response function Analysis with Multiple efficiencies) code was used to determine the uranium enrichment. If the shield materials were placed between the detector and the sample, the error was measured and analyzed. Measurement time was varied and the dependency of the analysis uncertainty on the measurement time was studied. Transmitted gamma-ray intensities and FWHMs of the peaks in the energy spectrum were measured as the shield thickness was varied. The transmitted gamma-ray intensity follows shape of the exponential function, and the FWHM was almost independent of the shield thickness. The uncertainty of FRAM analysis was studied when the thick shield material was placed between the detector and the sample. Our work could be helpful in analysis of the fissile material in uranium sample.

• Journal of the Korea Safety Management & Science
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• v.22 no.1
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• pp.23-32
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• 2020

There has been a significant decline in the number of rail accidents in Korea since system safety management activities were introduced. Nonetheless, analyzing and preventing human error-related accidents is still an important issue in railway industry. As a railway system is increasingly automated and intelligent, the mechanism and process of an accident occurrence are more and more complicated. It is now essential to consider a variety of factors and their intricate interactions in the analysis of rail accidents. However, it has proved that traditional accident models and methods based on a linear cause-effect relationship are inadequate to analyze and to assess accidents in complex systems such as railway systems. In order to supplement the limitations of traditional safety methods, recently some systemic safety models and methods have been developed. Of those, FRAM(Functional Resonance Analysis Method) has been recognized as one of the most useful methods for analyzing accidents in complex systems. It reflects the concepts of performance adjustment and performance variability in a system, which are fundamental to understanding the processes of an accident in complex systems. This study aims to apply FRAM to the analysis of a rail accident involving human errors, which occurred recently in South Korea. Through the application of FRAM, we found that it can be a useful alternative to traditional methods in the analysis and assessment of accidents in complex systems. In addition, it was also found that FRAM can help analysts understand the interactions between functional elements of a system in a systematic manner.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.1-8
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• 2005

In this paper, a FRAM design style based on PMOS-gating cell structure is described. The memory cell consists of a PMOS access transistor and a ferroelectric capacitor. Its plate is grounded. The proposed scheme employs three novel operating methods: 1) $V_{DD}$ precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore, Because this configuration doesn`t need the on-pitch plate control circuitry, it is effective in realizing cost-effective chip sizes. Implementation for a 2.5-V, 1-Mb FRAM prototype design in a $0.25-{\mu}m$, triple-well technology shows a chip size of $3.22\;mm^{2}$, an access time of 48 ns and an active current of 11 mA. The cell efficiency is 62.52 $\%$. It has gained approximately $20\;\%$ improvement in the cell array efficiency over the conventional plate-driven FRAM scheme.

• Korean Chemical Engineering Research
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• v.62 no.1
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• pp.44-52
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• 2024

PSM(process safety management), introduced for the purpose of managing complex chemical processes, has contributed to the prevention of chemical accidents, but has recently revealed its limitations. Recently, major industrial accidents have increased, and in particular, Serious Industrial Accidents have increased rapidly in non-routine works since 2020. It is time for an effective PSM operation plan. This study examined that FRAM can be effectively used in the PSM operation process by using FRAM (Functional Resonance Analysis Method), a useful technique for understanding and predicting human error and accident occurrence processes by modeling nonlinear and complex interactions, to analyze accident cases that occurred in non-routine works, and to further analyze the process of performing general PSM non-routine works.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.155-155
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.31-31
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• 1997

• Journal of the Korean Society of Safety
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• v.36 no.4
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• pp.62-70
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• 2021

Representative systematic accident analysis methods proposed so far include AcciMap, STAMP, and FRAM. This study used these three techniques to analyze a fire accident case that occurred during routine manufacturing work in a domestic chemical plant and compared the results. The methods used different approaches to identify the cause of the accident, but they all highlighted similar causal factors. In addition to technical issues, the three accident analysis methods identified factors related to safety education, risk assessment, and the operation of the process safety management system, as well as management philosophy and company culture as problems. The AcciMap and STAMP models play complementary roles because they use hierarchical structures, while FRAM is more effective in analyses centered on human and organizational functions than in technical analyses.