• 한국콘텐츠학회논문지
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• 제6권12호
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• pp.105-112
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• 2006

본 연구에서는 일반적으로 잘 알려진 기저 세포암 검출을 위한 간단한 전처리 방법을 제안하였다. 전처리 과정은 half Hanning 윈도우와 함께 데이터를 클리핑하고 PCA(principal components analysis)를 이용하여 차원을 감소하였다. Half Hanning 윈도우는 $1650cm^{-1}$ 피크 부근의 크기를 낮춤으로써 음성 오류율을 줄여 분류 성능을 향상시켰다. 이 실험에서 사용한 MAP(maximum a posteriori), KNN (k-nearest neighbor), PNN(probabilistic neural network), MLP(multilayer perceptron), SVM(support vector machine)와 MSE(minimum squared error)의 분류결과는 제안한 방법이 효과적임을 입증하고 있다. KNN 분류방법은 216개 라만 스펙트럼에 대한 분류실험에서 민감도가 약 97.3%로 제안한 윈도우를 적용한 이 실험에서 기저 세포암 검출 성능이 가장 많이 개선되었다.

• 한국화재소방학회논문지
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• 제30권1호
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• pp.37-42
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• 2016

바이오디젤(Soy Methyl Ester, B100)과 디젤(Ultra Low Sulfur Diesel, ULSD)의 연소과정에서 발생되는 연기입자의 무차원 광소멸계수를 측정하였다. 무차원 광소멸계수는 633 nm의 He-Ne 레이저를 이용하여 광학적 방법으로 측정된 연기입자의 체적분율과 중력식 필터법에 의해 채집된 연기입자의 체적분율을 비교하여 결정하였다. 633 nm 대역에서 측정된 평균 무차원 광소멸계수는 각각 바이오디젤의 연기입자가 11.8, 디젤 연기입자가 11.1으로 측정 불확도 범위(${\pm}10.1%$) 내에서 거의 유사하였다. 다만, 라만 spectrum 분석결과를 통해 각 연료에서 발생된 연기입자 간의 광소멸(광흡수/광산란) 특성은 서로 상이할 수 있음을 확인할 수 있었다.

• 한국세라믹학회지
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• 제34권6호
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

• 한국재료학회지
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• 제23권1호
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• 한국표면공학회지
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• 제53권1호
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• 한국재료학회지
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• 제22권10호
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• pp.504-507
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• 2012

Synthesis of RGO (reduced graphene oxide)-CdS composite material was performed through CBD (chemical bath deposition) method in which graphene oxide served as the support and Cadmium Sulfate Hydrate as the starting material. Graphene-based semiconductor photocatalysts have attracted extensive attention due to their usefulness for environmental and energy applications. The band gap (2.4 eV) of CdS corresponds well with the spectrum of sunlight because the crystalline phase, size, morphology, specic surface area and defects, etc., of CdS can affect its photocatalytic activity. The specific surface structure (morphology) of the photocatalyst can be effective for the suppression of recombination between photogenerated electrons and holes. Graphene (GN) has unique properties such as a high value of Young's modulus, large theoretical specific surface area, excellent thermal conductivity, high mobility of charge carriers, and good optical transmittance. These excellent properties make GN an ideal building block in nanocomposites. It can act as an excellent electron-acceptor/transport material. Therefore, the morphology, structural characterization and crystal structure were observed using various analytical tools, such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. From this analysis, it is shown that CdS particles were well dispersed uniformly in the RGO sheet. Furthermore, the photocatalytic property of the resulting RGO-CdS composite is also discussed in relation to environmental applications such as the photocatalytic degradation of pollutants. It was found that the prepared RGO-CdS nanocomposites exhibited enhanced photocatalytic activity as compared with that of CdS nanoparticles. Therefore, better efficiency of photodegradation was found for water purification applications using RGO-CdS composite.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.533-537
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• 2003

Compared to sintered polycrystalline diamond (PCD), the deposited thin film diamond has a great advantage on the fabrication of cutting tools with complex geometries such as drills. Because of high performance in high speed machining non-ferrous difficult-to-cut materials in the field of automobiles industry, aeronautics and astronautics industry, diamond-coated drills find large potentialities in commercial applications. However, the poor adhesion of the diamond film on the substrate and high surface roughness of the drill flute adversely affect the tool lift and machining quality and they become the main technical barriers for the successful development and commercialization of diamond-coated drills. In this paper, diamond thin films were deposited on the commercial WC-Co based drills by the electron aided hot filament chemical vapor deposition (EACVD). A new multiple coating technology based on changing gas pressure in different process stages was developed. The large triangular faceted diamond grains may have great contribution to the adhesive strength between the film and the substrate, and the overlapping ball like blocks consisted of nanometer sized diamond crystals may contribute much to the very low roughness of diamond film. Adhesive strength and quality of diamond film were evaluated by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectrum and drilling experiments. The ring-block tribological experiments were also conducted and the results revealed that the friction coefficient increased with the surface roughness of the diamond film. From a practical viewpoint, the cutting performances of diamond-coated drills were studied by drilling the SiC particles reinforced aluminum-matrix composite. The good adhesive strength and low surface roughness of flute were proved to be beneficial to the good chip evacuation and the decrease of thrust and consequently led to a prolonged tool lift and an improved machining quality. The wear mechanism of diamond-coated drills is the abrasive mechanical attrition.