Characterization of structural and field emissive properties of CNTs grown by ICP-CVD method as a function of Ni and Co catalysts thickness

ICP-CVD 방법에 의해 성장된 탄소나노튜브의 Ni 및 Co 촉매 두께에 따른 구조적 물성 및 전계 방출 특성 분석

  • Kim, Jong-Pil (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Young-Do (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Chong-Kyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 김종필 (한양대학교 전자전기제어계측공학과) ;
  • 김영도 (한양대학교 전자전기제어계측공학과) ;
  • 박창균 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2003.07.21

Abstract

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

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