Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of two-step deposition on the property of AlN films and the device characteristic of AlN-based FBARs

2단계 증착 방법이 AlN 박막의 물성 및 체적 탄성파 소자의 특성에 미치는 영향

  • Cho, Dong-Hyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Jung, Jun-Phil (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Lee, Jin-Bock (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 조동현 (한양대학교 전기전자제어계측공학과 박막소자연구실) ;
  • 정준필 (한양대학교 전기전자제어계측공학과 박막소자연구실) ;
  • 이진복 (한양대학교 전기전자제어계측공학과 박막소자연구실) ;
  • 박진석 (한양대학교 전기전자제어계측공학과 박막소자연구실)
  • Published : 2003.07.21
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Abstract

AlN thin films are prepared on Si (111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AlN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AlN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions FEAR devices with Al/AlN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics, the return loss and electromechanical coupling contant($k_t{^2}$) are estimated.

Keywords