Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Non-polar 6H-SiC Substrates for Optoelectronic Device Applications

광전소자 응용을 위한 무극성 6H-SiC 기판의 특성

  • Published : 2009.05.01
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Abstract

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

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References

  1. B. Rau, P. Waltereit, O. Brandt, M. Ramsteiner, K. H. Ploog, J. Puls, and F. Henneberger, 'In-plane polarization anisotropy of the spontaneous emission of m-plane GaN/ (Al,Ga)N quantum wells', Appl. Phys. Lett., Vol. 77, p. 3343, 2000 https://doi.org/10.1063/1.1326846
  2. P. G. Neudeck and J. A. Powell, 'Performance limiting micropipe defects in silicon carbide wafers', IEEE Electron Device Lett., Vol. 15, p. 63, 1994 https://doi.org/10.1109/55.285372
  3. J. Takahashi, M. Kanaya, and Y. Fujiwara, 'Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane', J. Crystal Growth, Vol. 135, p. 61, 1994
  4. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, 'Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN mulitple-quantum-well light-emitting diodes', Appl. Phys. Lett., Vol. 86, p. 111101, 2005 https://doi.org/10.1063/1.1875765
  5. S. M. Bishop, J. S. Park, J. Gu, B. P. Wagner, Z. J. Reitmeier, D. A. Batchelor, D. N. Zakharov, Z. Liliental-Weber, and R. F. Davis, 'Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11-20)', J. Crystal Growth, Vol. 300, p. 83, 2007 https://doi.org/10.1016/j.jcrysgro.2006.10.207
  6. H. Yano, T. Hirao, T. Kimoto, and H. Matsunami, 'High channel mobility in inversion layer of SiC MOSFETs for power switching transistors', Jpn. J. Appl. Phys., Vol. 39, p. 2008, 2000 https://doi.org/10.1143/JJAP.39.2008
  7. R. Weingartner, P. J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, and A. Winnacker, 'Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements', Appl. Phys. Lett., Vol. 80, p. 70, 2002 https://doi.org/10.1063/1.1430262
  8. D. Olego and M. Cardona, 'Raman scattering by coupled LO-phonon-plasmon modes and forbidden TO-phonon Raman scattering in heavily doped p-type GaAs', Phy. Rev., B, Vol. 24, No. 12, p. 7217, 1981 https://doi.org/10.1103/PhysRevB.24.7217
  9. H. Harima, S. Nakashima, and T. Uemura, 'Raman scattering from anisotropic LO-phonon-plasmon-coupled mode in n-type 4H- and 6H-SiC', J. Appl. Phys., Vol. 78, No. 3, p. 1996, 1995 https://doi.org/10.1063/1.360174