• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.546-548
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• 1987

We have studied 1iquid phase regrowth of phosphorus ion implanted silicon films on insulator (SOI) by rapid thermal annealing (RTA) method. Many twin boundaries were observed on the regrown silicon layer and mobility of the layer was increased from $14\;cm^2/v.sec$ to $38\;cm^2/v.sec$ after annealing at $1150^{\circ}C$ for 15 sec.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.237-238
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• 2008

본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• 한국진공학회지
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• 제13권2호
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• pp.72-78
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• 2004

TaN막 위에 magnetron sputtering으로 증착 시킨 Cu seed 막을 Cu 전해도금을 하기에 앞서 ECR plasma 장치로 전처리 세정하였다. 이때 Cu 막을 200∼$500^{\circ}C$로 변화시키면서 알곤 또는 질소 분위기에서 RTA(rapid themal annealing) 방법으로 열처리하였다. Cu seed 막 위에 전해도금법으로 형성한 Cu 막을 열처리했을 때 미세구조와 물리적 특성변화를 XRD(x-ray diffraction), EBSD(electron back-scattered diffraction), AFM(atomic force microscopy) 분석을 이용하여 조사하였다. $400^{\circ}C$보다 높은 온도에서 재결정이 일어났으며, 열처리 온도를 증가함에 따라 Cu막의 비저항이 감소하고 (111) 우선배향성이 증가하는 경향을 나타냈다. 최소의 비저항과 부드러운 표면 및 (111) 배향성이 뛰어난 Cu막을 얻기 위한 최적의 열처리 조건은 $400^{\circ}C$의 질소분위기에서 120초간 RTA처리를 하는 것으로 판단된다. 이 조건하에서 전해도금된 Cu막의 비저항(resistivity)과 표면 거칠기(surface roughness)는 각각 1.98$\mu$O-cm 및 17.77nm였다.

• 전자공학회논문지A
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• 제30A권3호
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• pp.61-66
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• 1993

The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.377-377
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• 2007

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.16.1-16.1
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.185.1-185
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.