Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on PZT capacitor on the glass substrate

유리 기판 위에서의 PZT 캐패시터에 관한 연구

  • 주필연 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 정규원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2000.04.28
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Abstract

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

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