Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 3
- /
- Pages.61-66
- /
- 1993
- /
- 1016-135X(pISSN)
The GaAs Inversion-type MISFET using Fluoride Gate Insulator
불화물 게이트 절연막을 이용한 반전형 GaAs MISFET
Abstract
The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850
Keywords