• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.115-120
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• 1998

The $TiN_x$ thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.21-25
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• 1999

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.180-182
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• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.4
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• pp.307-313
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• 2019

The traveling wave tube amplifier (TWTA), which can be applied to the Ka-band millimeter-wave multi-mode seeker, consists of an high voltage power supply(HVPS), a grid modulator, a command and control, and an RF assembly. We designed a power supply that generates a -17.9 kV high voltage by synchronizing the pulse repetition frequency(PRF) and power supply switching frequency(i.e. synchronization frequency), and a high-speed grid-switching modulator for RF pulse modulation. The TWTA, which is fabricated through miniaturization with a volume of 3.18 L, has high pulse switching characteristics of up to 18.5 ns. The maximum rise/fall time of the grid on/bias signal and peak power is more than 564.9 W. Moreover, an excellent spurious performance of -68.4 dBc or less was confirmed within the range of PRF and PRF/2.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.256-258
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• 2010

MPM(Microwave Power Module)은 진공 전력증폭기인 진행파관(TWT,Traveling Wave Tube)과 반도체 전력증폭기(SSA, Solid State Amplifier)를 결합한 구조로서, 미세한 RF신호를 입력 받아 고출력의 RF 신호로 증폭하는 장치이다. 본 논문은 MPM을 구동하기 위해, 필요한 수 kV이상의 높은 전압을 TWT에 공급해주는 고전압 전원공급기(HVPS, High Voltage Power Supply)에 관한 것이다. Main Topology는 Resonant Phase Shift Full Bridge Converter이며, 승압의 효과를 높이기 위해 2차 측에는 Voltage Multiplier를 사용하였다. MPM을 구동하는데 필요한 전압인Cathode(-4kV), FE_Bias(-5.25kV), Collector(-2kV)를 생성하며, FE_ON, OFF신호에 따라 고전압 스위칭 동작을 하여, RF 증폭을 제어 할 수 있다. 최종적으로 Prototype을 제작하고, 고찰된 실험결과를 제시하여 개발된 HVPS의 우수성을 검증한다.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.191-196
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• 2017

Microwave wireless power transmission (MWPT) is a promising technique for low and medium power applications such as wireless charging for sensor network or for biomedical chips in case with long ranges or in dispersive media such. A key factor of the MWPT technique is its efficiency, which includes the wireless power transmission efficiency and the radio frequency (RF) to direct current (DC) voltage efficiency of RF-DC converter (which transforms RF energy to DC supply voltage). The main problem in designing an RF-DC converter is the nonlinear characteristic of Schottky diodes; this characteristic causes low efficiency, higher harmonics frequency and a change in the input impedance value when the RF input power changes. In this paper, rather than using harmonic termination techniques of class E or class F power amplifiers, which are usually used to improve the efficiency of RF-DC converters, we propose a new method called "optimal input impedance" to enhance the performance of our design. The results of simulations and measurements are presented in this paper along with a discussion of our design concerning its practical applications.

• Proceedings of the IEEK Conference
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• 2000.06e
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• pp.61-64
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• 2000

This paper describes a RF Down-Conversion Mixer for mobile communication systems. This circuit achieves low voltage operation and low power consumption by reducing stacked devices of conventional gilbert cell mixer. In order to reduce stacked devices, we use source-follower structure. The proposed RF Down-Conversion mixer operates up to 1.85GHz at 1.5V power supply with 0.25um CMOS technology and consumes 2.2mA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.