• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.216-218
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• 2005

Planar spiral inductors on silicon substrates were optimally designed using MATLAB, which is a tool to perform numerical computations with matrices. The equivalent circuit parameters of the spiral inductors were extracted from the data measured from the spiral inductors fabricated using a 0.18 $\mu\textrm{m}$ RF CMOS process. The metal width, which is a critical design parameter, was optimized for the maximum quality factor with respect to the operating frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.485-489
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• 2015

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.569-575
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• 2013

An improved non-quasi-static gate-source impedance model including a parallel RC block for short-channel MOSFETs is developed to simulate RF MOSFET input characteristics accurately in the wide range of high frequency. The non-quasi-static model parameters are accurately determined using the physical input equivalent circuit. This improved model results in much better agreements between the measured and modelled input impedance than a simple one with a non-quasi-static resistance up to 40GHz, verifying its accuracy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.88-93
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• 2007

In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.4
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• pp.895-899
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• 2000

A method of measuring Q of a two port cavity by scattering parameters is proposed. The scattering parameters of a two port cavity resonator are derived by a lumped equivalent circuit model as a function of cavity parameters, including the cavity Q. These can be also obtained by direct measurement with a modern network analyzer, The results show good agreement with those from other well-known methods. This two port measurement can provide additional information such as the coupled power ratio, which is one of the important parameters for the beam accelerating cavities.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.358-359
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• 2019

철교나 석유비축기지 탱크저판 및 각종 매설관로 등 대부분 철 성분 골조는 시간이 경과하면 주변의 환경에 따라 부식이 급격히 일어난다. 이러한 철강재가 부식되는 철강재가 시설물의 주요 구성물이 되고 있는 시설물의 수명을 크게 단축시키는 주요원인이 되고 있다. 이에 대한 대비책으로 방청도료나 코팅을 이용하는 방법과 달리, 전기적으로 전위차를 같게 하여 부식을 방지하는 전기방식법을 적용함에 있어 방식전류가 불균일한 경우 양극 소모가 불균일함에 따라 교체시기 문제를 극복하기 위해 회로 등가 임피던스 추정 및 RF 릴레이 장착한 TB를 이용한 방식전류제어장치를 개발하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.5 s.335
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• pp.9-14
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• 2005

Simulation method for a pure radio-frequency (rf) mode of reflection-type and a pure rf mode of transmission-type radio-frequency single-electron transistor (RF-SET) operation is introduced. In this method, the solutions of differential equations based on Kirchhoff's law are obtained self-consistently at frequency-domain. Also, the steady-sate single-electron transistor (SET) current model and the time-dependent SET current model are used in this method. The reflected wave of a typical reflection-type RF-SET and the transmitted wave of a typical transmission-type RF-SET are calculated, and the accuracy of our developed method including the steady-state SET current model is verified with the method introduced by reference 2. At high frequency over GHz, results of our developed method including the time-dependent SET current model are considerably different from that including the steady-state SET current model. At high frequency over GHz, an exact time-dependent SET current model is needed to analyze RF-SET operation.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1955-1957
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• 2003

This paper presents a novel defected ground structure (DGS) and its application to a microwave oscillator. The presented oscillator is designed so as to use the suggested defected ground structure as a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM calculations and simple circuit analysis method. The implemented 1.07 GHz oscillator exhibits 0 dBm output power with over 15% dc-to-RF power efficiency and -106 dBc/Hz phase noise at 100 kHz offset from carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.530-538
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• 2007

An inductor library for efficient low cost RFIC design has been developed based on a standard digital 0.18 ${\mu}m$ CMOS process. The developed library provides four structural variations that are most popular in RFIC design; standard spiral structure, patterned ground shield(PGS) structure to enhance quality factor, stacked structure to enable high inductance values in a given silicon area, multilayer structure to lower series resistance. Electromagnetic simulation, equivalent circuit, and parameter extraction processes have been verified based on measurement results. The extensive measurement and simulation results of the inductor library can be a great asset for low cost RFIC design and development.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.248-251
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• 2000

본 논문에서는 SIEMENS사의 BAS125 소자의 I-V curve에서 RF신호를 고려하여 파라미터를 추출하였으며, 바이어스에 독립적인 외부소자를 추출하고, 바이어스에 종속적인 접합캐패시터를 S-parameter를 fitting하여 추출하였다.