JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Large-Signal Output Equivalent Circuit Modeling for RF MOSFET IC Simulation

  • Hong, Seoyoung (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • Received : 2015.04.16
  • Accepted : 2015.08.10
  • Published : 2015.10.30
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Abstract

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

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References

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