• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.1
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• pp.61-68
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• 2018

This paper is elaborates on the pure sine wave single phase inverter of 500W level which is driven by battery. The inverter is structured to raise the battery voltage to 400V by using the push-pull topology, and by using H-bridge with the high voltage, it outputs common 220VAC. This topology is utilized to use the power semiconductor device in order to design and manufacture the inverter of 500W at input voltage rating of 12VDC. As a result, the efficiency exceeds 90% in partial sections, but on average, the efficiency is approximately 89.5%, and as for output voltage, frequency fluctuation range and THD, the result can be less than ${\pm}5%$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.8
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• pp.19-23
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• 2005

The target of this research is a design of constant and high efficiency driving system for a low pressure UV lamp. An UV lamp system is one of wide range electrical equipments for semiconductor manufacturing and sterilization, etc... It is essential the technique of constant output for high added value device. A design target of driving system for low pressure UV lamp of conversion efficiency is 90[%], UV lamp of output stability within ${\pm}7.5[%]$, and lamp power is over 200[W]. The results meet the target of this study well, and have a benefit of domestic market occupation and enable to export. And if protection circuits were developed, it increases the stability of a electronic ballast for UV lamps.

• Journal of Advanced Navigation Technology
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• v.17 no.6
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• pp.700-704
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• 2013

Quantum-dot cellular automata(QCA) is a new technology and it is an one of the alternative high performance over existing complementary metal-oxide semi-conductor(CMOS). QCA is nanoscale device and ultra-low power consumption compared with transistor-based technologies, and various circuits using QCA technology have been proposed. Binary-coded decimal(BCD), which represents decimal digits in binary, is mainly used in electronic circuits and Microprocessor, and it is comfortable in conversion operation but many data loss. In this paper, we present an BCD-EXCESS 3 Code converter which can be efficiently used for subtraction and half adjust. The proposed scheme has efficiently designed considering space and time complexities and minimization of noise, and it has been simulated and confirmed.

• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• Journal of the Korean Society of Industry Convergence
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• v.25 no.1
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• pp.55-60
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• 2022

This study conducted the measurements of air flow rate for blower systems with experiment and numerical. A new airflow rate test method is suggested, with which it is possible to accurate measurements and calculate the air flow rate for blower systems. The blower(axial fan) is an industrial fluid machine device that supplies a large amount of air by driving an impeller with an electric motor, and it is widely used throughout the industry such as steel, power plant, chemical, semiconductor, LC D, food, and cement. The airflow from the blower is for exchanging the heat in the cooling unit or heat exchanger. The temperature of coolants and hydraulic oil primarily depends on the amount of airflow rate through the cooling package so its accurate estimation is very important. Moreover, it required a larger investment in time and cost since it could not be executed until the system is actually made. Therefore, this research is intended to examine the phenomenon of air flow pattern when testing air flow rate, suggested new test method, and show the result of the validation test.

• Journal of the Korean Society of Industry Convergence
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• v.25 no.3
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• pp.333-340
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• 2022

Recently, the use of large-capacity secondary batteries for electric vehicles is rapidly increasing, and accordingly, the demand for technologies and equipment for battery reliability evaluation is increasing significantly. The existing short circuit test equipment for evaluating the stability of the existing secondary battery consists of relays, MCs, and switches, so when a large current is energized during a short circuit, contact fusion failures occur frequently, resulting in high equipment maintenance and repair costs. There was a disadvantage that repeated testing was impossible. In this paper, we developed an electronic short circuit test device that realizes stable switching operation when a large-capacity power semiconductor switch is energized with a large current, and applied smart ICT technology to this electronic short circuit stability test system to achieve high speed and high precision through communication with the master. It is expected that the inspection history management system based on data measurement, database format and user interface will be utilized as essential inspection process equipment.

• ETRI Journal
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• v.44 no.5
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• pp.859-874
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• 2022

This paper presents a low-power and lightweight human body communication (HBC) receiver with an embedded dummy electrode for improved signal acquisition. The clock data recovery (CDR) circuit in the receiver operates with a low supply voltage and utilizes a clock phase inversion scheme. The receiver is equipped with a main electrode and dummy electrode that strengthen the capacitive-coupled signal at the receiver frontend. The receiver CDR circuit exploits a clock inversion scheme to allow 0.9-V operation while achieving a shorter lock time than at 3.3-V operation. In experiments, a receiver chip fabricated using 130-nm complementary metal-oxide-semiconductor technology was demonstrated to successfully receive the transmitted signal when the transmitter and receiver are placed separately on each hand of the user while consuming only 4.98 mW at a 0.9-V supply voltage.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.8
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• pp.2209-2221
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• 2023

As the supply of electric vehicles increases, research on wireless charging methods for convenience has been increasing. Because the electric vehicle wireless transmission device is installed on the ground and the electric vehicle battery is installed on the floor of the vehicle, the transmission and reception antennas are approximately 15-30 cm away, and thus strong magnetic fields are exposed during wireless charging. When a metallic foreign object is placed in the magnetic field area, an eddy current is induced to the metallic foreign object, and heat is generated, creating danger of fire and burns. Therefore, this study proposes a method to detect metallic foreign objects in the magnetic field area of a wireless electric vehicle charging system. An active detection-only coil array was used, and an LC resonance circuit was constructed for the frequency of the supply power signal. When a metallic foreign object is inserted into the charging zone, the characteristics of the resonance circuit are broken, and the magnitude and phase of the voltage signal at both ends of the capacitor are changed. It was confirmed that the proposed method has about 1.5 times more change than the method of comparing the voltage magnitude at one node.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.442-446
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased parking density. Therefore, it was interested in scaling theory, and full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot carriers in different MOSFET structures. MOSFET structures investigated in this study include a conventional MOSFET with a single source/drain, implant a lightly-doped drain(LDD) MOSFET, and a MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and those are analyzed using TCAD(Technology Computer Aided Design) for scaling and simulation. The scaling has used a constant-voltage scaling method, and we have presented MOSFET´s characteristics such as I-V characteristic, impact ionization, electric field and recognized usefulness of TCAD, providing a physical basis for understanding how they relate to scaling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.