• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.286-289
• /
• 2000

PHEMT's with three different doping structures, -SH(single-heterojunction), DH (double-heterojunction), and DC(doped-channel)-,were designed, fabricated and characterized to study the effect of doping layer structures on the performance of millimeter-wave PHEMT's. 0.25${\mu}{\textrm}{m}$ DH-PHEMT with below-channel doping of 1$\times$10$^{12}$ c $m^{-2}$ was superior to SH-PHEMT by 40％ in $I_{dss}$, 20％ in f/sib T/ and showed broador gm- $I_{D}$ characteristics which is advantageous to power applications DH-PHEMT showed similar DC and small-signal performance compared with DC-PHEMT. Taking the much higher carrier mobility into considerations, DH-PHEMT is believed to be the best candidate for millimeter-wave, low-noise and/or power applications.s.s.

• 한국전기전자재료학회논문지
• /
• 제25권3호
• /
• pp.187-192
• /
• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• 한국전기전자재료학회논문지
• /
• 제17권8호
• /
• pp.904-909
• /
• 2004

We studied the dielectric properties and voltage dependence on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor capacitance and tan6 of 22 kV, 154 kV were 52/42 pF and $7.4\times{10}/^{-4}, 2.15\times{10}^{-4}$, respectively in these results, the trend was increased with the increase of temperature the tan$\delta$ of XLPE/semiconductive layer and XLPE/water/ semiconductive layer were increased as compared with that of XLPE Temperature reliability of tan$\delta$ was small.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2015년도 전력전자학술대회 논문집
• /
• pp.179-180
• /
• 2015

The task of measuring losses becomes more challenging with ever increasing efficiencies and operating frequencies in power electronics applications. Generally, the process of traditional switching loss calculation in flyback converter is very complicated. MOSFET drain-source voltage and current waveforms are needed to calculate switching loss. However, as we know in switched capacitor converter, switching loss can be easily calculated by charge and energy conservation law with known initial and final capacitor voltages. In this paper, the same method is applied to fly-back converter switching loss analysis to simplify calculation procedure.

• 반도체디스플레이기술학회지
• /
• 제16권2호
• /
• pp.49-54
• /
• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.161-166
• /
• 2021

To prevent accidents caused by changes in the surrounding environment or other factors, various protection facilities are installed at the photovoltaic connection module. The main causes of fire are sparks due to foreign substances inside the photovoltaic connection module through high temperature rise and dew condensation in the photovoltaic connection module, and fire due to heat from the power diode. The proposed method can predict the fire by measuring flame, carbon dioxide, carbon monoxide, temperature, humidity, input voltage, and current on the photovoltaic connection module, and when the fire conditions are reached, fire alarm and power off can be sent to managers and users in real time to prevent fire in advance.

• 반도체디스플레이기술학회지
• /
• 제21권4호
• /
• pp.110-115
• /
• 2022

Accurate current-voltage modeling of solar cell systems plays an important role in power prediction. Solar cells have nonlinear characteristics that are sensitive to environmental conditions such as temperature and irradiance. In this paper, the output characteristics of photovoltaic module are accurately predicted by combining the artificial neural network and physical model. In order to estimate the performance of PV module under varying environments, the artificial neural network model is trained with randomly generated temperature and irradiance data. With the use of proposed model, the current-voltage and power-voltage characteristics under real environments can be predicted with high accuracy.

• 반도체디스플레이기술학회지
• /
• 제21권3호
• /
• pp.33-38
• /
• 2022

A solar power generation system uses a solar module that collects solar radiation energy, a connecting board that collects DC power generated from the solar module, and a diode to prevent reverse current from flowing from an inverter to the solar module. The existing photovoltaic connection module consists of only fuses and diodes for reverse polarity and overcurrent blocking, and does not have fire diagnosis, prevention, and suppression functions in the event of a fire. To solve this problem, this paper presents a method to monitor the internal state of the photovoltaic connection module using several sensors and to prevent and extinguish a fire using solenoid valves and fire extinguishing agents when a fire is detected. Through the experiment, it was confirmed that the proposed method normally suppresses the fire in event of a fire.

• 반도체디스플레이기술학회지
• /
• 제21권1호
• /
• pp.85-90
• /
• 2022

In this paper, an asynchronous nonvolatile memory module using a self-diagnosis function was designed. For the system to work, a lot of data must be input/output, and memory that can be stored is required. The volatile memory is fast, but data is erased without power, and the nonvolatile memory is slow, but data can be stored semi-permanently without power. The non-volatile static random-access memory is designed to solve these memory problems. However, the non-volatile static random-access memory is weak external noise or electrical shock, data can be some error. To solve these data errors, self-diagnosis algorithms were applied to non-volatile static random-access memory using error correction code, cyclic redundancy check 32 and data check sum to increase the reliability and accuracy of data retention. In addition, the possibility of application to an asynchronous non-volatile storage system requiring reliability was suggested.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제12권4호
• /
• pp.377-387
• /
• 2012

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.