• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.486-489
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• 2015

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.50-55
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• 2016

In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.400-405
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• 2008

Motor is energy converting system to generate mechanical force from electrical power and there are various typed motors in home, office, factory, vehicles, aircraft, shipping, etc. Recently in compliance with performance and reliability and the applications of variable speed motors with invert driver are expanded. Almost high power inverter have IGBT and IGBT's fault cause motor system fault. If we can calculate and foresee troubles of IGBT, we can protect accident caused by motor system fault. In this paper, the deterioration test method of IGBT devices is proposed and the test results of proposed method are shown by evaluated equipment. The basic concept of proposed method is current-voltage characteristic curve test between drain and source of IGBT in open state. The applied voltage type is ramp and it is confirmed that the current-voltage curvet pattern of IGBT in open state represents IGBT's deterioration state.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1332-1333
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• 2008

본 논문은 IGBT의 transient turn off 시간 동안 게이트 전압의 변화를 측정하여 IGBT가 스위칭 조건에서 상당히 열적 스위칭 특성이 많은 영향을 미치는 파워 모듈레이터나 인버터 시스템에서 간단하게 IGBT의 내부 온도를 유추하는 방법을 제안하고 있다.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.536-538
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• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.917-918
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• 2006

In this paper, a novel new pulse power generatorbased on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is importantfor series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.1
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• pp.99-104
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• 1999

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme which senses the collector voltage and controls the gate signal actively limits the overvoltage. The new series connected IGBT gate driver is made and its validity is verified by the experimental results in the series connected IGBT circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.3
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• pp.222-230
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• 1998

This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.287-289
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• 2011

본 논문은 인피니언 테크놀로지스의 RC-IGBT (Reverse Conducting Isolated Gate Bipolar Transistor)와 SOI 드라이브 IC(Integrated Circuit)를 사용한 DIL(Dual-In-Line) 구조의 저전력 모듈인 CIPOS TM (Control Integrated POwer System) 제품을 소개한다. 이 전력 모듈은 최적의 게이트 구동회로, 트렌치 필드스톱의 RC-IGBT를 사용하여 기존의 IGBT 와 Diode를 사용하는 구조에서 최소화 된 패키지 크기를 사용하여 높은 효율을 구현할 수 있다. 본 논문을 통하여 인버터의 어플리케이션에 적합하게 설계된 전력모듈에 대한 소개와 그 특징 및 시스템 구성을 위한 고려사항에 대하여 기술하였다.