Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

The Optimal Design of High Voltage Field Stop IGBT

고전압 Field Stop IGBT의 최적화 설계에 관한 연구

  • Ahn, Byoung-Sup (Department of Information & Telecommunication, Far East University) ;
  • Zhang, Lanxiang (Department of Energy Semiconductor Engineering, Far East University) ;
  • Liu, Yong (Department of Energy Semiconductor Engineering, Far East University) ;
  • Kang, Ey Goo (Department of Energy Semiconductor Engineering, Far East University)
  • 안병섭 (극동대학교 일반대학원 정보통신학과) ;
  • 장란향 (극동대학교 일반대학교 에너지반도체학과) ;
  • 류용 (극동대학교 일반대학교 에너지반도체학과) ;
  • 강이구 (극동대학교 일반대학교 에너지반도체학과)
  • Received : 2015.07.19
  • Accepted : 2015.07.24
  • Published : 2015.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

Keywords

References

  1. E. G. Kang and M. Y. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 15, 758 (2002).
  2. T. J. Nam, H. S. Chung, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 24, 713 (2011).
  3. Malvino, A. Paul, Bates, and J. David, Electronic Principles (McGraw-Hill College, 2006)
  4. Gates and D. I. Earl, Introduction to Electronics 4/E Hardcover (Delmar, 2001)
  5. S. S. Kyoung, J. H. Seo, Y. H. Kim, J. S. Lee, E. G. Kang, and M. Y. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 22, 12 (2009).