• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.702-708
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• 2020

Recently, as LED display systems have become larger, research on effective power control methods for the systems has been in progress. This paper proposes a power control method to minimize power loss due to the difference in LED characteristics for each channel of a backlight unit (BLU) system. The proposed LED driver IC has a power optimization function and detects the minimum headroom voltage for constant current operation of all channels and linearly controls the DC-DC converter output. Thus, it minimizes power consumption due to unnecessary additional voltage. In addition, it does not require a voltage sensing comparator or a voltage generation circuit for each channel. This has a great advantage in reducing the chip size and for stabilization when implementing an integrated circuit. In order to verify the proposed function, an IC was designed using Cadence and Synopsys' design tools, and it was fabricated with a Magnachip 0.35um 5V/40V CMOS process. The experiments confirmed that the proposed power control method controls the minimum required voltage of the BLU system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.555-558
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40 V/1 A high-power output for voltage reference of automotive IC. It provides 250kHz PWM (pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated spectre of IC-design-tools and fabricated Dong-bu Hitec 0.35um BD350BA process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.559-564
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• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.12
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• pp.1197-1202
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• 2009

We present a power-efficient driving scheme that consists of piezoelectric actuator and driver IC for AF (Auto-Focus) on ISM (Image Sensor Module). The piezoelectric actuator is more power-efficient than conventional voice coil motor actuator. And high power-efficiency driver IC is designed. So the proposed driving scheme using designed piezoelectric actuator and driver IC is more close to recent trend of green IT. The diver IC should guarantee fast and accurate performance. So, the optimum driving method and high accurate frequency synthesizer are proposed. The die area of designed driver IC is $2.0{\times}1.6mm^2$ and power consumption is 2.8mW.

• Journal of IKEEE
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• v.16 no.2
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• pp.102-108
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• 2012

3-dimensional integrated circuits (3D-ICs) have some problems for power delivery network design due to larger supply currents and larger power delivery paths compared to 2D-IC. The power delivery network consists of power bumps & through-silicon-vias (TSVs), and IR-drop at each node varies with the number and location of power bumps & TSVs. It is important to optimize the power bumps & TSVs while IR-drop constraint is satisfied in order to operate chip ordinarily. In this paper, the power bumps & TSVs optimization with optimized power mesh structure for power delivery network in 3D-ICs is proposed.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.113-114
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• 2010

정부의 친환경, 에너지절감 정책에 따라 누전차단 기능을 갖는 반도체 IC에 있어서도 고감도의 성능을 가지면서도 전력 소모가 적은 IC의 개발이 요구 되고 있다. 본 논문에서는 산업용 누전차단기(Earth Leakage Circuit Breaker)에 사용되는 핵심 반도체로서 고감도이면서도 저전력 소모를 하는 누전전류 검출 IC의 개발을 수행한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.202-211
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• 2014

The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.