Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Gate Drive IC for Power Modules with Shoot-through Immunity

상단락 방지용 모듈을 구동하기 위한 게이트 구동 IC

  • 서대원 (단국대학교 전자전기공학과) ;
  • 김준식 (단국대학교 전자전기공학과) ;
  • 박시홍 (단국대학교 전자전기공학과)
  • Published : 2009.07.01
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Abstract

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

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References

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