• 제목/요약/키워드: Potential Model

검색결과 6,976건 처리시간 0.031초

Dual potential capacity model for predicting failure of RC beams damaged by corrosion of tensile reinforcement

  • Sun-Jin Han;Deuckhang Lee;Hyo-Eun Joo;Kang Su Kim
    • Computers and Concrete
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    • 제34권4호
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    • pp.503-517
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    • 2024
  • This study presents an analysis model to estimate the shear strength of a reinforced concrete (RC) member with corroded tensile reinforcements. The thick-walled cylinder theory was modified to fit the dual potential capacity model to reflect interdependent failure mechanisms, including the degradation effect of bonds in corroded tensile reinforcement. In the proposed model, it is considered that the shear failure of corroded RC members with no proper anchorage detail is primarily dominated by the flexural-bond mechanism, where insufficient bond strength is provided owing to corrosion damage. However, when tensile reinforcements are properly anchored in the end regions using end hooks or mechanical devices, it is assumed that the tied-arch action can be developed as a secondary shear transfer mechanism, even under severe corrosion damage. The proposed model was verified by comparison with shear test results of corroded RC members collected from the literature, and it appeared that the proposed model can estimate their shear strengths with a good level of accuracy, regardless of various anchorage details and corrosion rates in tensile reinforcements.

A Novel Modulation Method for Three-Level Inverter Neutral Point Potential Oscillation Elimination

  • Yao, Yuan;Kang, Longyun;Zhang, Zhi
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.445-455
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    • 2018
  • A novel algorithm is proposed to regulate the neutral point potential in neutral point clamped three-level inverters. Oscillations of the neutral point potential and an unbalanced dc-link voltage cause distortions of the output voltage. Large capacitors, which make the application costly and bulky, are needed to eliminate oscillations. Thus, the algorithm proposed in this paper utilizes the finite-control-set model predictive control and the multistage medium vector to solve these issues. The proposed strategy consists of a two-step prediction and a cost function to evaluate the selected multistage medium vector. Unlike the virtual vector method, the multistage medium vector is a mixture of the virtual vector and the original vector. In addition, its amplitude is variable. The neutral point current generated by it can be used to adjust the neutral point potential. When compared with the virtual vector method, the multistage medium vector contributes to decreasing the regulation time when the modulation index is high. The vectors are rearranged to cope with the variable switching frequency of the model predictive control. Simulation and experimental results verify the validity of the proposed strategy.

A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET's

  • Jit, S.;Pandey, Prashant;Pal, B.B.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권4호
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    • pp.217-222
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    • 2003
  • A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

자동 뼈 연령 평가를 위한 비전 트랜스포머와 손 X 선 영상 분석 (Unleashing the Potential of Vision Transformer for Automated Bone Age Assessment in Hand X-rays)

  • 정경희;;;추현승
    • 한국정보처리학회:학술대회논문집
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    • 한국정보처리학회 2023년도 춘계학술발표대회
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    • pp.687-688
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    • 2023
  • Bone age assessment is a crucial task in pediatric radiology for assessing growth and development in children. In this paper, we explore the potential of Vision Transformer, a state-of-the-art deep learning model, for bone age assessment using X-ray images. We generate heatmap outputs using a pre-trained Vision Transformer model on a publicly available dataset of hand X-ray images and show that the model tends to focus on the overall hand and only the bone part of the image, indicating its potential for accurately identifying the regions of interest for bone age assessment without the need for pre-processing to remove background noise. We also suggest two methods for extracting the region of interest from the heatmap output. Our study suggests that Vision Transformer holds great potential for bone age assessment using X-ray images, as it can provide accurate and interpretable output that may assist radiologists in identifying potential abnormalities or areas of interest in the X-ray image.

딥러닝 알고리즘을 이용한 매설 배관 피복 결함의 간접 검사 신호 진단에 관한 연구 (Indirect Inspection Signal Diagnosis of Buried Pipe Coating Flaws Using Deep Learning Algorithm)

  • 조상진;오영진;신수용
    • 한국압력기기공학회 논문집
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    • 제19권2호
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    • pp.93-101
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    • 2023
  • In this study, a deep learning algorithm was used to diagnose electric potential signals obtained through CIPS and DCVG, used indirect inspection methods to confirm the soundness of buried pipes. The deep learning algorithm consisted of CNN(Convolutional Neural Network) model for diagnosing the electric potential signal and Grad CAM(Gradient-weighted Class Activation Mapping) for showing the flaw prediction point. The CNN model for diagnosing electric potential signals classifies input data as normal/abnormal according to the presence or absence of flaw in the buried pipe, and for abnormal data, Grad CAM generates a heat map that visualizes the flaw prediction part of the buried pipe. The CIPS/DCVG signal and piping layout obtained from the 3D finite element model were used as input data for learning the CNN. The trained CNN classified the normal/abnormal data with 93% accuracy, and the Grad-CAM predicted flaws point with an average error of 2m. As a result, it confirmed that the electric potential signal of buried pipe can be diagnosed using a CNN-based deep learning algorithm.

수조모델을 이용한 메쉬접지극의 접지저항에 관한 연구 (Study for the Grounding Resistance of the Mesh Grounding Electrode by Water Tank Model)

  • 김주찬;김성삼;최종규;이충식;고희석
    • 조명전기설비학회논문지
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    • 제20권3호
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    • pp.28-35
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    • 2006
  • 최근들어 빌딩내에 있는 많은 전기 전자 통신설비들은 기기 보호 및 안전을 위하여 반드시 접지를 필요로 하며, 고장 전류가 같은 빌딩내에 있는 어떤 접지 시스템으로 흐를 때, 이 전류에 의한 전위상승에 영향을 받아 다른 접지시스템의 전위 상승을 유도할 수 있다. 이러한 전위간섭은 접지극의 표면전위에 의해 영향을 받으며, 전각의 형상과 깊은 관련이 있다. 본 논문에서의 기본적 공식은 전위간섭을 받는 접지극과 전위간섭의 원천이 되는 두 접지극의 표면 전위에 기초하여 추론되었으며, 다중 접지극에 있어서의 전위간섭의 정도는 미리 간단한 모델을 이용하여 시뮬레이션을 실시하였다. 이는 대지위에 설치되는 건조물의 접지저항을 추정하기 위한 것이며, 실제의 현장에서 측정한 접지 저항값과 추정값과의 일치성을 입증하기 위하여 반구형 수조에서 모의 접지시스템의 축적 모델로 실험을 행한 결과, 확실한 메쉬접지극의 접지저항을 얻을 수 있었다. 따라서 수조 모델 실험을 통하여 메쉬접지각의 접지저항을 추정할 수 있음을 보여주고 있다.

3차원 지질모델링을 이용한 가곡광산 광상 포텐셜 지도 작성 (Mineral Potential Mapping of Gagok Mine Using 3D Geological Modeling)

  • 박계순;조성준;오현주;이창원
    • 한국지구과학회지
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    • 제35권6호
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    • pp.412-421
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    • 2014
  • 효과적인 광물자원 탐사 기술을 개발하기 위하여 광물자원의 포텐셜 지도 구축 연구를 수행하였다. 대상 지역은 광상 성인모델이 알려진 가곡광산으로 선정하였다. 성인모델을 바탕으로 관계화성암, 단층, 탄산염암 등의 지질학적 요인들을 평가 인덱스로 선정하였다. 각 요인들과 광체간의 공간적 상관관계를 분석하여 각 지질 구조 들로부터의 거리에 따른 가중치를 해석, 가곡광산에 대한 포텐셜 지도를 구축하였다. 해석된 포텐셜 지도는 현재 알려진 광체의 위치에서 높은 포텐셜 값을 갖으며, 높은 포텐셜 영역의 패턴 역시 광체 패턴과 유사하게 나타나고 있다. 이 결과는 추후 수행될 자원 탐사 시 현재 알려진 광체와 유사한 지질환경을 갖는 영역을 효과적으로 제시할 수 있기 때문에 그 효용성이 높다 할 수 있다.

실시간 일정계획 문제에 대한 Control 기반의 매개변수 프로그래밍을 이용한 해법의 개발 (Development of An On-line Scheduling Framework Based on Control Principles and its Computation Methodology Using Parametric Programming)

  • 유준형
    • 제어로봇시스템학회논문지
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    • 제12권12호
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    • pp.1215-1219
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    • 2006
  • Scheduling plays an important role in the process management in terms of providing profit-maximizing operation sequence of multiple orders and estimating completion times of them. In order to takes its full potential, varying conditions should be properly reflected in computing the schedule. The adjustment of scheduling decisions has to be made frequently in response to the occurrence of variations. It is often challenging because their model has to be adjusted and their solutions have to be computed within short time period. This paper employs Model Predictive Control(MPC) principles for updating the process condition in the scheduling model. The solutions of the resulting problems considering variations are computed using parametric programming techniques. The key advantage of the proposed framework is that repetition of solving similar programming problems with decreasing dimensionis avoided and all potential schedules are obtained before the execution of the actual processes. Therefore, the proposed framework contributes to constructing a robust decision-support tool in the face of varying environment. An example is solved to illustrate the potential of the proposed framework with remarks on potential wide applications.

A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions

  • Tripathi, Shweta;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권1호
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    • pp.40-50
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    • 2011
  • A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

축소형 모델 접지전극의 매설깊이에 따른 위험전압의 분석 (Analyses of Hazard Voltages According to the Buried Depth of Small-sized Model Grounding Electrode)

  • 백영환;이복희
    • 조명전기설비학회논문지
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    • 제23권4호
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    • pp.56-61
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    • 2009
  • 본 논문은 축소형 모델 접지전극이 접속된 금속제 구조물 주변의 대지표면전위분포와 위험전압에 대하여 기술하였다. 접지에 관련된 문제를 실제 현장데이터로부터 적정한 결론을 도출하기는 매우 어려우므로 접지전극 주변의 전위분포와 접촉전압, 보폭전압의 산정에 축소형 모델시험을 사용한다. 본 연구에서는 균질토양을 모의하기 위해 직경이 1,100[mm] 반구형 용기를 사용하였다. 실험결과, 접지전극 주변의 대지표면전위는 매우 높게 나타났으며, 특히 접지전극의 직상부의 대지표면전위는 다른 위치에 비해 높게 나타났다. 접지전극의 매설깊이가 증가함에 따라 대지표면전위와 보폭전압은 낮아지지만 접촉전압은 높아지는 것으로 나타났다.