• 대한의생명과학회지
• /
• 제11권3호
• /
• pp.301-305
• /
• 2005

MR spectroscopy of intracellularly located $^{133}Cs$ has been used to monitor the uptake of Gd-EOB-DTPA by the isolated rat liver. As shown by ${31}P$ spectroscopy, accumulation of $^{133}Cs$ ions in hepatocytes does not produce detectable effects on the metabolism. The hepatic internalization of Gd-EOB-DTPA was followed by the paramagnetic relaxation enhancement of the intracellular $^{133}Cs$ ions, and confirmed by parallel quantitations of Gd and Cs run by inductively coupled plasma analysis of liver samples and aliquots of perfusate. Two peaks are observed at -22.0 and -23.5 ppm, with respect to the line of the external reference arbitarily set to 0 ppm. Upon rinsing of the extracellular compartment with regular K-H free of CsCl, the high-field resonance disappears within 20min. The intracellular concentration was confirmed by ICP, which gives a $Cs^+$ content of $22.0\pm3.5mM$. The relaxation data significantly underestimate the Gd content, suggesting a potential compartmentation of $Cs^+$ and the contrast agent.

• Journal of applied mathematics & informatics
• /
• 제18권1_2호
• /
• pp.393-403
• /
• 2005

We study the isothermal flow of a dusty viscous incompressible conducting fluid between two types of boundary motions- oscillatory and non-oscillatory, under the influence of gravitational force. Within the frame work of some physically realistic approximations and suitable boundary conditions, closed form solutions were obtained for the velocity profiles and the skin friction of the particulate flow. These results show that for a constant pressure gradient, only the velocity profile of the fluid and the skin friction are unaffected by gravity, while magnetic field is seen to affect both the fluid, particle velocities and the skin friction. Thus, our results are extension of previous results in literature, and graphical demonstration of some these solutions have been presented.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.2023-2025
• /
• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• Journal of Mechanical Science and Technology
• /
• 제19권5호
• /
• pp.1148-1157
• /
• 2005

In the present study, the unsteady Hartmann flow of a dusty viscous incompressible electrically conducting fluid under the influence of an exponentially decreasing pressure gradient is studied without neglecting the ion slip. The parallel plates are assumed to be porous and subjected to a uniform suction from above and injection from below. The fluid is acted upon by an external uniform magnetic field which is applied perpendicular to the plates. An analytical solution for the governing equations of motion is obtained to yield the velocity distributions for both the fluid and dust particles.

• Journal of the Korean Society for Industrial and Applied Mathematics
• /
• 제16권2호
• /
• pp.125-135
• /
• 2012

The transient magnetohydrodynamic (MHD) generalized Couette flow with heat transfer through a porous medium of an electrically conducting, viscous, incompressible fluid bounded by two parallel insulating porous plates is studied in the presence of uniform suction and injection and a heat source considering the Hall effect. A uniform and constant pressure gradient is imposed in the axial direction and an externally applied uniform magnetic field as well as a uniform suction and injection are applied in the direction perpendicular to the plates. The two plates are kept at different but constant temperatures while the Joule and viscous dissipations are included in the energy equation. The effect of the Hall current, the porosity of the medium and the uniform suction and injection on both the velocity and temperature distributions is investigated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.21-24
• /
• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Journal of Mechanical Science and Technology
• /
• 제20권8호
• /
• pp.1232-1239
• /
• 2006

In the present study, the unsteady Hartmann flow with heat transfer of a viscous incompressible electrically conducting fluid under the influence of an exponentially decreasing pressure gradient is studied. The parallel plates are assumed to be porous and subjected to a uniform suction from above and injection from below while the fluid is acted upon by an external uniform magnetic field applied perpendicular to the plates. The equations of motion are solved analytically to yield the velocity distributions for both the fluid and dust particles. The energy equations for both the fluid and dust particles including the viscous and Joule dissipation terms, are solved numerically using finite differences to get the temperature distributions.

• 마이크로전자및패키징학회지
• /
• 제9권4호
• /
• pp.25-29
• /
• 2002

기존 홀 센서의 단점을 개선하기 위해서 트랜치를 이용한 수직 홀 센서를 제작하였다. 수직 홀 센서는 센서의 칩 표면에 수평 자계를 검출할 수 있으며, 홀 센서는 실리콘 직접 본딩 기술에 의해 제작된 SOI 기판 위에 제작하였다. 기판 아래의 $SiO_2$층과 마이크로머시닝에 의한 트랜치가 홀 센서의 동작 영역을 정의한다. 홀 센서의 감도는 150V/AT로 측정되었으며 안정된 값을 나타내었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 B
• /
• pp.1070-1072
• /
• 2004

In this paper, the characteristic of slotless permanent magnet brushless motors analyze and compare parallel with radial way. This paper derive magnetic field solutions due to the PM. Torque, flux linkage and back emf are then derived. The results are shown in good conformity with those obtained from the commonly used finite element analysis.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.251-253
• /
• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.