• Journal of Sensor Science and Technology
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• v.25 no.6
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• pp.412-417
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• 2016

Scent display is used mainly to augment immersion, reality and emotion, besides provide more tension and suggestion. However, this paper pay attention to effect of smells as ambient media, and propose a notification service using scents without sound and vibration when a user has new mail, test message and phone call. And we designed a scent service platform and API function for easy application of scent notification service. We demonstrated feasibility by experiment using smart phone and self-producted scent device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.601-607
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• 2016

Piezoelectric thick films of soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material (S55) were fabricated using a conventional tape casting method. Ag-Pd electrodes were printed on the piezoelectric film at room temperature and all 5 layered films with a dimension of $12mm{\times}16mm$ were successfully laminated for a multi-layered piezoelectric ceramic actuator. The laminated specimens were co-fired at $1,100^{\circ}C$ for 1 h. A flat layered and dense microstructure was obtained for the $112{\mu}m$ thick piezoelectric actuator after sintering process. Thereafter, a prototype piezoelectric speaker was fabricated using the multi-layered piezoelectric ceramic actuator which can operate as a bimorph. Its SPL (sound pressure level) characteristic was also evaluated for speaker application. Frequency response revealed that the output SPL with a root mean square voltage of 10 V increased gradually to the highest peak of 87.5 dB for 1.5 kHz and exhibited a relatively stable behavior over the measured frequency range (${\leq}20kHz$) at a distance of 10 cm, implying that the fabricated piezoelectric speaker is potential for speaker applications.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.144-149
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• 2003

Carbon tips were grown on Si cantilevers by applying an electron beam to them directly with Scanning Electron Microscope. A carbon tip was fabricated by aligning the electron beam directly down the vertical axis of Si cantilever and then irradiating a single spot on the cantilever for a proper time in the dominant atmosphere of residual gases generated by the oil of the diffusion pump. A number of control parameters for SEM, including exposure time, acceleration voltage, emission current, and beam probe current, were allowed to make various aspect ratio feature. The growth of carbon tips was not affected by the surface morphology of substrates. We could acquired the tip whose effective length is 0.5 $\mu\textrm{m}$, bottom diameter is 90 nm and cone half angle $3.5^{\circ}$ The growth technique of the high aspect ratio carbon tips on the tip-free cantilevers is available to reduce the complexities of fabricating sub-micron scale tips on the PZT thin film actuator integrated AFM cantilevers.

• Journal of Ceramic Processing Research
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• v.23 no.1
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• pp.29-32
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• 2022

K(Ta_0.80Nb_0.20)O₃ films with Pb(Zr_0.52Ti_0.48)O₃PZT buffer layer on Pt/Ti/SiO₂/Si substrate were fabricated by sol-gel and spin-coating method. Structural and electrical properties were measured with variation of the sintering temperature, and the applicability to microwave materials was investigated. All K(Ta_0.80Nb_0.20)O₃ films showed a cubic crystal structure. Average grain size was about 123~193 nm and average thickness of the K(Ta_0.80Nb_0.20)O₃ films was approximately 366 nm. Through the AFM results, root mean square roughness (Rrms) of all K(Ta_0.80Nb_0.20)O₃ films was around 6 nm. All K(Ta_0.80Nb_0.20)O₃ films showed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability with an applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta_0.80Nb_0.20)O₃ film sintered at 700 ℃ showed good values of 22.1% at 10 V, -0.594/℃.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.220-221
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device. The made 31 type triple-morph cantilever was resulted from the conditions of 100k$\Omega$, 0.25g, 154Hz respectively. The thick film was prepared at the condition of $6.57V_{rms}$, and its power was $432.31{\mu}W$ and its thickness was $50{\mu}m$.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.22-25
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• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Society of Information Storage Systems
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• v.3 no.1
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• pp.47-53
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• 2007

In this paper, a thermo-piezoelectric mechanism with integrated heaters and piezoelectric sensors has been studied for low power probe-based data storage. Silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been developed to improve the uniformity of cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. And, the $34\times34$ probe array integrated with CMOS circuits has been successfully developed by simple one-step bonding process. The process can simplify the process step and reduce tip wear using silicon nitride tip.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.05a
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• pp.1073-1078
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• 2003

This paper presents the vibration characteristics of a cantilever beam in contact with a fluid using a PZT actuator and PVDF film. dynamic behaviors of a flexible beam-water interaction system are examined. The effect of the liquid level on free vibration of the composite beam in a partially liquid-filled circular cylinder is investigated. The coupled system is subject to an undisturbed boundary condition un the fluid domain. In the vibration analysis of a wetted beam. the decoupled analyses between beam and fluid have been conventionally employed by considering first the composite beam vibration in the all and secondly Performing the correction taking account for surrounding fluid effects. That is, this investigation was to look at how natural frequencies, mode shapes. and damping are affected by liquid level variations. The signals from the sensor according to the applied input voltage are digitalized and filtered in order to obtain the dynamic characteristics of the composite beam in contact with fluid. It was found that the coupled natural frequencies decreased with the fluid level for the identical composite beam due to added mass effect. In case of the free-free boundary condition, the natural frequency gently decreased at fluid water level between 20% and 80% in the first tending mode and we found out the bends of stair shape for added mass effect of the fluid.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.487-494
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• 2021

Piezoelectric generators use direct piezoelectric effects that convert mechanical energy into electrical energy. Many studies were attempted to fabricate piezoelectric generators using piezoelectrics such as ZnO, PZT, PVDF. However, these various inorganic/organic piezoelectric materials are not suitable for bio-implantable devices due to problems such as brittleness, toxicity, bio-incompatibility, bio-degradation. Thus, in this paper, piezoelectric generators were prepared using a silk fibroin film which is bio-compatible by dip-coating method. The silk fibroin films are a mixed state of silk I and silk II having stable β-sheet type structures and shows the d₃₃ value of 8~10 pC/N. There was a difference in output voltages according to the thickness. The silk fibroin generators, coated 10 times and 20 times, revealed the power density of 16.07 μW/cm² and 35.31 μW/cm² using pushing tester, respectively. The silk fibroin generators are sensitive to various pressure levels, which may arise from body motions such as finger tapping, foot pressing, wrist shaking, etc. The silk fibroin piezoelectric generators with bio-compatibility shows the applicability as a low-power implantable piezoelectric generator, healthcare monitoring service, and biotherapy devices.