Transactions of the Society of Information Storage Systems (정보저장시스템학회논문집)

The Society of Information Storage Systems (정보저장시스템학회)
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Thermo-Piezoelectric Read/Write Mechanisms for Probe-Based Data Storage

  • Nam, Hyo-Jin (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Kim, Young-Sik (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Lee, Sun-Yong (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Jin, Won-Hyeog (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Jang, Seong-Soo (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Cho, Il-Joo (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite)) ;
  • Bu, Jong-Uk (Microsystem Group, Devices and Materials Lab., LG Electronics Institute of Technology (LG-Elite))
  • Published : 2007.03.01
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Abstract

In this paper, a thermo-piezoelectric mechanism with integrated heaters and piezoelectric sensors has been studied for low power probe-based data storage. Silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been developed to improve the uniformity of cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. And, the $34\times34$ probe array integrated with CMOS circuits has been successfully developed by simple one-step bonding process. The process can simplify the process step and reduce tip wear using silicon nitride tip.

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