• 조명전기설비학회논문지
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• 제12권1호
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• pp.58-68
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• 1998

본 연구는 컴퓨터제어 유전 히스테리시스 특성 측정장치를 개발하기 위하여 수행한 것이다. 이 측정장치는 파형 발생부, 고전압 증폭부, 측정부, 데이터 취득부 및 관련 제어회로로 구성되어 있으며 컴퓨터에 인터페이싱한 장치이다. 인가전압 및 주파수가 P.C에 의해 제어되며 측정 데이터를 P.C의 RAM에 저장할 수 있으므로 데이터의 분석 및 그래픽이 매우 편리하다. 본 장치의 정도를 시험하기 위하여 시중의 마이카 콘덴서 및 스타롤 콘덴서에 대한 정전용량을 고전압을 인가하여 측정하였으며 그 결과 정격값과 잘 일치하였다. PZT 세라믹 시료에 대한 시험에서 단일주파수의 전계를 인가함으로써 전형적인 D-E 히스테리시스 곡선을 얻을 수 있었으며, 이중주파수의 전계를 인가함으로써 $\varepsilon-E$ 및 D-E 히스테리시스 곡선을 동시에 측정할 수 있었다.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.164-167
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.234-237
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• 2015

In this work, in order to develop the ceramics with an excellent electrocaloric effect, $[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}]TiO_3$ ceramics were fabricated by conventional solid state reaction method. The ceramics was observed as rhombohedral phase by X-ray diffraction patterns. To investigate the electrocaloric effect of the ceramics, P-E hysteresis loops were measured at various temperature. The temperature change ${\Delta}T$ of these ceramics was calculated using the Maxwell's relations. The maximum value of temperature change ${\Delta}T$ was obtained as 0.3 $1^{\circ}C$ at $165^{\circ}C$ under applied electric fields 45 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.284-287
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• 2017

The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.48-51
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• 1997

(Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.