• 한국분말재료학회지
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• 제25권2호
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• pp.170-177
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• 2018

Colloidally synthesized luminescent nanocrystals (NCs) have attracted tremendous attention due to their unique nanoscale optical and electronic properties. The emission properties of these NCs can be precisely tuned by controlling their size, shape, and composition as well as by introducing appropriate dopant impurities. Nowadays, these NCs are actively utilized for various applications such as optoelectronic devices including light emitting diodes (LEDs), lasers, and solar cells, and bio-medical applications such as imaging agents and bio-sensors. In this review, we classify luminescent nanomaterials into quantum dots (QDs), upconversion nanoparticles (UCNPs), and perovskite NCs and present their intrinsic emission mechanism. Furthermore, the recently emerging issues of efficiency, toxicity, and durability in these materials are discussed for better understanding of industry demands. As well, the future outlook will be offered for researchers to guide the direction of future research.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.469-471
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• 1988

The basic modeling is analyzed on the optoelectronic properties of CSP-DH laser structure using self-consistent calculation of optical field and the electron-hole distribution in the active region. Laser properties is modelled include gain profile, threshold, near field and far field pattern. This new characterization is allowed for consideration such as carrier spatial hole burning due to strong optical fields which stimulate recombination.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.429-429
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• 2013

We present a systematic study of the electrical, optical and electromechanical properties of flexible graphene/metal grid hybrid transparent conductive electrodes using 4-point prove method, ultraviolet/visible spectrometer and inner/outer bending test system. The hybrid electrodes were synthesized by depositing a silver grid on a graphene surface. The sheet resistance of hybrid electrodes was as low as 30 Ω/square, while the transmittance was 90%. The electromechanical properties as a function of the change of bending radius were evaluated by measuring the change in resistance. The result will be presented in detail. We believe that these results will provide useful information for the flexible optoelectronic devices based on graphene transparent electrodes.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.737-749
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• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1428-1429
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• 2009

Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

• 한국세라믹학회지
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• 제31권4호
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• pp.436-447
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• 1994

ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.88-91
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• 2002

InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic chemical vapor deposition and their structural and optical properties were studied. When the average In content was increased by increasing TMIn flow rate, PL measurement showed little change in PL peak position and large increase in PL intensity instead. Large changes in PL peak position could be achieved by changing growth temperature. We propose the formation of fixed In content, highly In-rich quantum dot-like phases in InGaN MQWs driven by spinodal decomposition.